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NIKO-SEM
NIKO-SEM

P0860ETFS Datasheet Preview

P0860ETFS Datasheet

N-Channel Field Effect Transistor

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P0860ETFS pdf
NIKO-SEM
N-Channel Enhancement Mode
P0860ETF:TO-220F
P0860ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.05Ω
ID
8A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
8
5
25
3.5
61.2
36
14
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
3.4
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
REV 1.0
1
LIMITS
MIN TYP MAX
UNIT
600
2 2.7
4
V
±100 nA
G-18-4




NIKO-SEM
NIKO-SEM

P0860ETFS Datasheet Preview

P0860ETFS Datasheet

N-Channel Field Effect Transistor

No Preview Available !

P0860ETFS pdf
NIKO-SEM
N-Channel Enhancement Mode
P0860ETF:TO-220F
P0860ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
Gate Voltage Drain Current
VDS = 600V, VGS = 0V , TC = 25 °C
IDSS
VDS = 480V, VGS = 0V , TC = 100 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 4A
VDS = 10V, ID = 4A
DYNAMIC
0.83 1.05
10.5
Input Capacitance
Ciss
1270
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
114
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 480V, ID = 8A, VGS = 10V
VDD = 300V, ID = 8A, RG= 25Ω
10
29
5.1
8.4
23
31
115
50
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
Forward Voltage1
IS
VSD IF = 8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 8A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 380 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
390
3.9
8
1
A
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
G-18-4
2




NIKO-SEM
NIKO-SEM

P0860ETFS Datasheet Preview

P0860ETFS Datasheet

N-Channel Field Effect Transistor

No Preview Available !

P0860ETFS pdf
NIKO-SEM
N-Channel Enhancement Mode
P0860ETF:TO-220F
P0860ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
Output Characteristics
10
VGS=10V
8
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
6 VGS=4.5V
VGS=4.5V
VGS=4.2V
4
2
Transfer Characteristics
10
8
6
25
4
125
-20
2
0
0 3 6 9 12
VDS, Drain-To-Source Voltage(V)
15
On-Resistance VS Gate-To-Source
4
ID=4A
3
2
1
0
0123456
VGS, Gate-To-Source Voltage(V)
7
On-Resistance VS Drain Current
2
1.6
1.2
0.8
VGS=10V
0.4
0
2 4 6 8 10
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
3.0
2.5
2.0
1.5
1.0
0.5
VGS=10V
ID=4A
0.0
-50
-25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
0
02468
ID , Drain-To-Source Current(A)
10
Capacitance Characteristic
2000
1800
1600
1400
1200
CISS
1000
800
600
400
200
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
REV 1.0
G-18-4
3




Part Number P0860ETFS
Description N-Channel Field Effect Transistor
Maker NIKO-SEM
Total Page 4 Pages
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