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NIKO-SEM
NIKO-SEM

P0690ATFS Datasheet Preview

P0690ATFS Datasheet

N-Channel High Voltage Mode Field Effect Transistor

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P0690ATFS pdf
NIKO-SEM
N-Channel High Voltage Mode P0690ATF:TO-220F
Field Effect Transistor
P0690ATFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
900V
2.35Ω
ID
6A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
900
±30
6
3.5
18
3
45
52
20
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
2.4
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
900
VDS = VGS, ID = 250A
2.5 3.8 4.5
VDS = 0V, VGS = ±30V
±100
VDS = 900V, VGS = 0V , TC = 25 °C
1
VDS = 720V, VGS = 0V , TC = 100 °C
100
V
nA
A
REV 1.0 1 D-36-5



NIKO-SEM
NIKO-SEM

P0690ATFS Datasheet Preview

P0690ATFS Datasheet

N-Channel High Voltage Mode Field Effect Transistor

No Preview Available !

P0690ATFS pdf
NIKO-SEM
N-Channel High Voltage Mode P0690ATF:TO-220F
Field Effect Transistor
P0690ATFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 3A
VDS = 10V, ID = 3A
DYNAMIC
2 2.35
6
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
1610
89
Reverse Transfer Capacitance
Crss
9
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 720V, ID =6A, VGS = 10V
VDD = 450V, ID =6A, RG= 6Ω
34
10.5
11
80
190
120
130
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF =6A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 380 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
545
3.6
6
1.4
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0 2 D-36-5


Part Number P0690ATFS
Description N-Channel High Voltage Mode Field Effect Transistor
Maker NIKO-SEM
Total Page 4 Pages
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