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NIKO-SEM
NIKO-SEM

P0610BT Datasheet Preview

P0610BT Datasheet

N-Channel Field Effect Transistor

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P0610BT pdf
NIKO-SEM
N-Channel Enhancement Mode
P0610BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
6.5mΩ
ID2
120A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
100
±20
120
76
375
39
770
208
83
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Package limitation current is 110A
TYPICAL
MAXIMUM
0.6
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNITS
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
100
VDS = VGS, ID = 250A
1.3 1.8 2.3
VDS = 0V, VGS = ±20V
±100
VDS = 80V, VGS = 0V
1
VDS = 80V, VGS = 0V, TJ = 125 °C
10
V
nA
A
REV 1.1
1
E-41-4



NIKO-SEM
NIKO-SEM

P0610BT Datasheet Preview

P0610BT Datasheet

N-Channel Field Effect Transistor

No Preview Available !

P0610BT pdf
NIKO-SEM
N-Channel Enhancement Mode
P0610BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
DYNAMIC
5.8 8
5.3 6.5
140
Input Capacitance
Ciss
6188
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
747
Reverse Transfer Capacitance
Crss
233
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.26
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =50V,ID = 20A
VDD = 50V,
ID 20A, VGS = 10V, RGEN =6Ω
121
64.2
15.8
30
20
60
55
57
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
120
1.2
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 20A, dIs/dt= 100A/μs
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 110A
58
136
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.1
2
E-41-4


Part Number P0610BT
Description N-Channel Field Effect Transistor
Maker NIKO-SEM
Total Page 4 Pages
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