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NIKO-SEM
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P0603BDG Datasheet Preview

P0603BDG Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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P0603BDG pdf
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0603BDG
TO-252 (DPAK)
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30 6.5m
ID
75A
D
G
1. GATE
2. DRAIN
3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TL
LIMITS
±20
75
50
170
40
140
5.6
60
32.75
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle 1
TYPICAL
0.6
MAXIMUM
2.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
LIMITS
UNIT
MIN TYP MAX
30
1 1.5
3
V
±100 nA
1
µA
25
1 APR-03-2006



NIKO-SEM
NIKO-SEM

P0603BDG Datasheet Preview

P0603BDG Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

P0603BDG pdf
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0603BDG
TO-252 (DPAK)
Lead-Free
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = 10V, VGS = 10V
VGS = 10V, ID = 30A
VGS = 5V, ID = 24A
VDS = 15V, ID = 30A
70
5.3 6.5
7.6 9.5
19
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 15V, f = 1MHz
VDS = 15V, VGS = 10V,
ID = 25A
VDS = 15V,
ID 30A, VGS = 10V, RGS = 2.7
2679
1040
280
28
10
15
11
9
32
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = IS, VGS = 0V
Reverse Recovery Time
trr
20
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / µS
200
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2 .
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
8
75
170
1.3
A
m
S
pF
nC
nS
A
V
nS
A
nC
REMARK: THE PRODUCT MARKED WITH “P0603BDG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name.
2 APR-03-2006


Part Number P0603BDG
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker NIKO-SEM
Total Page 5 Pages
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