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NIKO-SEM
NIKO-SEM

P057AAT Datasheet Preview

P057AAT Datasheet

N-Channel Field Effect Transistor

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P057AAT pdf
NIKO-SEM
N-Channel Enhancement Mode
P057AAT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75 5.8mΩ
ID
129A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.3mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Limited by package.
2Pulse width limited by maximum junction temperature.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
129
82
410
60
557
192
77
-55 to 150
275
UNITS
V
A
mJ
W
°C
MAXIMUM
0.65
63
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
75
2 2.5
4
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
1
A
10
VDS = 10V, VGS = 10V
129
A
REV 1.1
Jul-29-2009
1



NIKO-SEM
NIKO-SEM

P057AAT Datasheet Preview

P057AAT Datasheet

N-Channel Field Effect Transistor

No Preview Available !

P057AAT pdf
NIKO-SEM
N-Channel Enhancement Mode
P057AAT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
DYNAMIC
RDS(ON)
gfs
VGS = 10V, ID = 100A
VDS = 25V, ID = 50A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0mV, VDS = 0V, f = 1MHz
VDS =60V, VGS = 10V,
ID = 80A
VDD = 40V,
ID 40A, VGS = 10V, RGS = 2.5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current3
Forward Voltage1
IS
VSD IF = 100A, VGS = 0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Limited by package.
4.7 5.8 mΩ
100 S
12500
1090
629
3.8 4
223
64
80
40
60
130
50
pF
Ω
nC
nS
129 A
1.3 V
90 nS
260 nC
REMARK: THE PRODUCT MARKED WITH “P057AAT”, DATE CODE or LOT #
REV 1.1
Jul-29-2009
2


Part Number P057AAT
Description N-Channel Field Effect Transistor
Maker NIKO-SEM
Total Page 4 Pages
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