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NIKO-SEM
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P0460ETFA Datasheet Preview

P0460ETFA Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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P0460ETFA pdf
NIKO-SEM
N-Channel Enhancement Mode P0460ETFA:TO-220F
Field Effect Transistor
P0460ETFAS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.5Ω
ID
4A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
4
2.5
20
2
20
36.8
14.7
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
TYPICAL
MAXIMUM
3.4
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
600
VDS = VGS, ID = 250A
2 2.8 4
VDS = 0V, VGS = ±30V
±100
VDS = 600V, VGS = 0V , TC = 25 °C
1
VDS = 480V, VGS = 0V , TC = 100 °C
10
V
nA
A
REV 1.0
1
G-30-2



NIKO-SEM
NIKO-SEM

P0460ETFA Datasheet Preview

P0460ETFA Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

P0460ETFA pdf
NIKO-SEM
N-Channel Enhancement Mode P0460ETFA:TO-220F
Field Effect Transistor
P0460ETFAS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2A
VDS = 10V, ID = 2A
DYNAMIC
1.8 2.5
5
Ω
S
Input Capacitance
Output Capacitance
Ciss 590
Coss VGS = 0V, VDS = 25V, f = 1MHz 63 pF
Reverse Transfer Capacitance
Crss
8
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg 14
Qgs VDD = 480V, ID = 4A, VGS = 10V 2.4 nC
Qgd 5
td(on)
15
tr
td(off)
tf
VGS = 10V , VDD = 300V,
ID = 4A, RG= 25Ω
16
nS
52
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 4A, VGS = 0V
4A
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 4A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
334 nS
2.2 uC
REV 1.0
2
G-30-2


Part Number P0460ETFA
Description N-Channel Enhancement Mode Field Effect Transistor
Maker NIKO-SEM
Total Page 4 Pages
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