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  NEC Electronic Components Datasheet  

MC-4R128CPE6C Datasheet

Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT

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MC-4R128CPE6C pdf
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4R128CPE6C
Direct RambusTM DRAM RIMMTM Module
128M-BYTE (64M-WORD x 16-BIT)
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R128CPE6C modules consists of eight 128M Direct Rambus DRAM (Direct RDRAM™) devices (µPD488448).
These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
184 edge connector pads with 1mm pad spacing
128 MB Direct RDRAM storage
Each RDRAM® has 32 banks, for 256 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Low power and powerdown self refresh modes
Separate Row and Column buses for higher efficiency
Over Drive Factor (ODF) support
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14807EJ2V0DS00 (2nd edition)
Date Published August 2000 NS CP (K)
Printed in Japan
The mark 5 shows major revised points.
©
2000



  NEC Electronic Components Datasheet  

MC-4R128CPE6C Datasheet

Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT

No Preview Available !

MC-4R128CPE6C pdf
MC-4R128CPE6C
Order information
Part number
Organization I/O Freq. RAS access time
MHz
ns
Package
Mounted devices
MC-4R128CPE6C - 845
MC-4R128CPE6C - 745
MC-4R128CPE6C - 653
64M x 16
800
711
600
45 184 edge connector pads RIMM 8 pieces of
45 with heat spreader
µPD488448FF
53 Edge connector : Gold plated FBGA (µBGA®) package
2 Preliminary Data Sheet M14807EJ2V0DS00



  NEC Electronic Components Datasheet  

MC-4R128CPE6C Datasheet

Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT

No Preview Available !

MC-4R128CPE6C pdf
Module Pad Configuration
MC-4R128CPE6C
B1
B2
B3
B4
B5
B6
B7
B8
B9
B10
B11
B12
B13
B14
B15
B16
B17
B18
B19
B20
B21
B22
B23
B24
B25
B26
B27
B28
B29
B30
B31
B32
B33
B34
B35
B36
B37
B38
B39
B40
B41
B42
B43
B44
B45
B46
Side B
B47
B48
B49
B50
B51
B52
B53
B54
B55
B56
B57
B58
B59
B60
B61
B62
B63
B64
B65
B66
B67
B68
B69
B70
B71
B72
B73
B74
B75
B76
B77
B78
B79
B80
B81
B82
B83
B84
B85
B86
B87
B88
B89
B90
B91
B92
GND
LDQA7
GND
LDQA5
GND
LDQA3
GND
LDQA1
GND
LCFM
GND
LCFMN
GND
NC
GND
LROW2
GND
LROW0
GND
LCOL3
GND
LCOL1
GND
LDQB0
GND
LDQB2
GND
LDQB4
GND
LDQB6
GND
LDQB8
GND
LCMD
VCMOS
SIN
VCMOS
NC
GND
NC
VDD
VDD
NC
NC
NC
NC
GND
LDQA8
GND
LDQA6
GND
LDQA4
GND
LDQA2
GND
LDQA0
GND
LCTMN
GND
LCTM
GND
NC
GND
LROW1
GND
LCOL4
GND
LCOL2
GND
LCOL0
GND
LDQB1
GND
LDQB3
GND
LDQB5
GND
LDQB7
GND
LSCK
VCMOS
SOUT
VCMOS
NC
GND
NC
VDD
VDD
NC
NC
NC
NC
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
Side A
NC
NC
NC
NC
VREF
GND
SA0
VDD
SA1
SVDD
SA2
VDD
RCMD
GND
RDQB8
GND
RDQB6
GND
RDQB4
GND
RDQB2
GND
RDQB0
GND
RCOL1
GND
RCOL3
GND
RROW0
GND
RROW2
GND
NC
GND
RCFMN
GND
RCFM
GND
RDQA1
GND
RDQA3
GND
RDQA5
GND
RDQA7
GND
NC
NC
NC
NC
VREF
GND
SCL
VDD
SDA
SVDD
SWP
VDD
RSCK
GND
RDQB7
GND
RDQB5
GND
RDQB3
GND
RDQB1
GND
RCOL0
GND
RCOL2
GND
RCOL4
GND
RROW1
GND
NC
GND
RCTM
GND
RCTMN
GND
RDQA0
GND
RDQA2
GND
RDQA4
GND
RDQA6
GND
RDQA8
GND
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
A64
A65
A66
A67
A68
A69
A70
A71
A72
A73
A74
A75
A76
A77
A78
A79
A80
A81
A82
A83
A84
A85
A86
A87
A88
A89
A90
A91
A92
LCFM, LCFMN,
RCFM, RCFMN : Clock from master
LCTM, LCTMN,
RCTM, RCTMN : Clock to master
LCMD, RCMD : Serial Command Pad
LROW2 - LROW0,
RROW2 - RROW0 : Row bus
LCOL4 - LCOL0,
RCOL4 - RCOL0 : Column bus
LDQA8 - LDQA0,
RDQA8 - RDQA0 : Data bus A
LDQB8 - LDQB0,
RDQB8 - RDQB0 : Data bus B
LSCK, RSCK : Clock input
SA0 - SA2 : Serial Presence Detect Address
SCL, SDA : Serial Presence Detect Clock
SIN, SOUT : Serial I/O
SVDD
: SPD Voltage
SWP
: Serial Presence Detect Write Protect
VCMOS
: Supply voltage for serial pads
VDD : Supply voltage
VREF
: Logic threshold
GND
: Ground reference
NC : These pads are not connected
Preliminary Data Sheet M14807EJ2V0DS00
3




Part Number MC-4R128CPE6C
Description Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
Maker NEC
Total Page 16 Pages
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