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  NEC Electronic Components Datasheet  

MC-458CB647 Datasheet

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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MC-458CB647 pdf
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-458CB647
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
5 Description
The MC-458CB647EFA and MC-458CB647PFA are 8,388,608 words by 64 bits synchronous dynamic RAM module
on which 4 pieces of 128M SDRAM : µPD45128163 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
8,388,608 words by 64 bits organization
Clock frequency and access time from CLK
Part number
MC-458CB647EFA-A75
5
5 MC-458CB647PFA-A75
5
/CAS latency
CL = 3
CL = 2
CL = 3
CL = 2
Clock frequency
(MAX.)
133 MHz
100 MHz
133 MHz
100 MHz
Access time from CLK
(MAX.)
5.4 ns
6.0 ns
5.4 ns
6.0 ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and full page)
Programmable wrap sequence (sequential / interleave)
5 Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10 Ω ± 10 % of series resistor
Single 3.3 V ± 0.3 V power supply
LVTTL compatible
4,096 refresh cycles /64 ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Unbuffered type
Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14279EJ3V0DS00 (3rd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1999



  NEC Electronic Components Datasheet  

MC-458CB647 Datasheet

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

No Preview Available !

MC-458CB647 pdf
MC-458CB647
Ordering Information
Part number
MC-458CB647EFA-A75
Clock frequency
(MAX.)
133 MHz
5 MC-458CB647PFA-A75
Package
168-pin Dual In-line Memory Module
(Socket Type)
Edge connector : Gold plated
25.4 mm height
Mounted devices
4 pieces of µPD45128163G5 (Rev. E)
(10.16 mm (400) TSOP (II))
4 pieces of µPD45128163G5 (Rev. P)
(10.16 mm (400) TSOP (II))
2 Data Sheet M14279EJ3V0DS00



  NEC Electronic Components Datasheet  

MC-458CB647 Datasheet

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

No Preview Available !

MC-458CB647 pdf
MC-458CB647
Pin Configuration
168-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated)
85 VSS
86 DQ32
87 DQ33
88 DQ34
89 DQ35
90 Vcc
91 DQ36
92 DQ37
93 DQ38
94 DQ39
VSS
DQ0
DQ1
DQ2
DQ3
Vcc
DQ4
DQ5
DQ6
DQ7
1
2
3
4
5
6
7
8
9
10
95 DQ40
DQ8
11
96 VSS
VSS 12
97 DQ41
DQ9
13
98 DQ42 DQ10 14
99 DQ43 DQ11 15
100 DQ44 DQ12 16
101 DQ45 DQ13 17
102 Vcc
Vcc 18
103 DQ46
DQ14
19
104 DQ47
DQ15
20
105 NC
NC 21
106 NC
NC 22
107 VSS
VSS 23
108 NC
NC 24
109 NC
NC 25
110 Vcc
Vcc 26
111 /CAS
/WE 27
112
DQMB4
DQMB0
28
113
DQMB5
DQMB1
29
114 NC
/CS0
30
115 /RAS
NC 31
116 VSS
VSS 32
117 A1
A0 33
118 A3
A2 34
119 A5
A4 35
120 A7
A6 36
121 A9
A8 37
122
BA0 (A13)
A10
38
123 A11 BA1 (A12) 39
124 Vcc
Vcc 40
125 CLK1
Vcc 41
126 NC
CLK0
42
127 VSS
VSS 43
128 CKE0
NC 44
129 NC
/CS2
45
130
DQMB6
DQMB2
46
131
DQMB7
DQMB3
47
132 NC
NC 48
133 Vcc
Vcc 49
134 NC
NC 50
135 NC
NC 51
136 NC
NC 52
137 NC
NC 53
138 VSS
VSS 54
139 DQ48 DQ16 55
140 DQ49 DQ17 56
141 DQ50 DQ18 57
142 DQ51 DQ19 58
143 Vcc
Vcc 59
144 DQ52 DQ20 60
145 NC
NC 61
146 NC
NC 62
147 NC
NC 63
148 VSS
VSS 64
149 DQ53 DQ21 65
150 DQ54 DQ22 66
151 DQ55 DQ23 67
152 VSS
VSS 68
153 DQ56 DQ24 69
154 DQ57 DQ25 70
155 DQ58 DQ26 71
156 DQ59 DQ27 72
157 Vcc
Vcc 73
158 DQ60 DQ28 74
159 DQ61 DQ29 75
160 DQ62 DQ30 76
161 DQ63 DQ31 77
162 VSS
VSS 78
163 CLK3
CLK2
79
164 NC
NC 80
165 SA0
WP 81
166 SA1
SDA
82
167 SA2
SCL 83
168 Vcc
Vcc 84
/××× indicates active low signal.
A0 - A11
: Address Inputs
[Row: A0 - A11, Column: A0 - A8]
BA0 (A13), BA1 (A12) : SDRAM Bank Select
DQ0 - DQ63
: Data Inputs/Outputs
CLK0 - CLK3
: Clock Input
CKE0
: Clock Enable Input
/CS0, /CS2
: Chip Select Input
/RAS
: Row Address Strobe
/CAS
: Column Address Strobe
/WE : Write Enable
DQMB0 - DQMB7 : DQ Mask Enable
SA0 - SA2
: Address Input for EEPROM
SDA
: Serial Data I/O for PD
SCL : Clock Input for PD
VCC : Power Supply
VSS : Ground
WP : Write Protect
NC : No Connection
Data Sheet M14279EJ3V0DS00
3




Part Number MC-458CB647
Description 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Maker NEC
Total Page 16 Pages
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