MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FET
The 2SK1658 is an N -channel vertical type MOS FET which can be
driven by 2.5 V power supply.
As the MOS FET is low Gate Leakage Current, it is suitable for appliances
including Filter Circuit.
PACKAGE DRAWING (Unit : mm)
• Directly driven by ICs having a 3 V power supply.
• Has low Gate Leakage Current
IGSS = ±5 nA MAX. (VGS = ±3.0 V)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS 30 V
Gate to Source Voltage (VDS = 0 V)
VGSS ±7 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note
Total Power Dissipation (TA = 25°C)
PT 150 mW
Tch 150 °C
Topt −55 to +80 °C
Tstg −55 to +150 °C
Note. PW ≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15638EJ2V0DS00 (2nd edition)
(Previous No. TC-2361)
Date Published June 2001 NS CP (K)
Printed in Japan
The mark 5 shows major revised points.