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  NEC Electronic Components Datasheet  

J449 Datasheet

2SJ449

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J449 pdf
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ449
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ449 is P-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
Low On-Resistance
RDS(on) = 0.8 MAX. (@ VGS = –10 V, ID = –3.0 A)
Low Ciss Ciss = 1040 pF TYP.
High Avalanche Capability Ratings
Isolated TO-220 Package
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
–250
V
Gate to Source Voltage
VGSS
m 30 V
Drain Current (DC)
ID(DC)
m 6.0
A
Drain Current (pulse)*
ID(pulse)
m 24 A
Total Power Dissipation (Tc = 25 ˚C) PT1
35 W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
–6.0 A
Single Avalanche Energy** EAS 180 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = –20 V 0
0.7 ±0.1
2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1
2.54
1 23
1. Gate
2. Drain
3. Source
MP-45F(ISOLATED TO-220)
Drain
Gate
Body
Diode
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Source
Document No. D10030EJ1V0DS00
Date Published May 1995 P
Printed in Japan
© 1995



  NEC Electronic Components Datasheet  

J449 Datasheet

2SJ449

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J449 pdf
2SJ449
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
RDS(on)
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
–4.0
2.0
TYP.
0.55
–4.8
3.5
1040
360
70
24
16
47
14
23.1
7.1
12.9
0.92
155
930
MAX.
0.8
–5.5
–100
m 100
UNIT
V
S
µA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CONDITIONS
VGS = –10 V, ID = –3.0 A
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –3.0 A
VDS = –250 V, VGS = 0
VGS = m 30 V, VDS = 0
VDS = –10 V
VGS = 0
f = 1 MHz
ID = –3.0 A
VGS(on) = –10 V
VDD = –125 V
RG = 10 , RL = 42
ID = –6.0 A
VDD = –200 V
VGS = –10 V
IF = –6.0 A, VGS = 0
IF = –6.0 A, VGS = 0
di/dt = 50 A/µs
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
RG = 25
PG
VGS = –20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Test Circuit 3 Gate Charge
D.U.T.
IG = –2 mA
PG.
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50
Starting Tch
RL
VDD
D.U.T.
RG
PG. RG = 10
VGS
0
t
t = 1µs
Duty Cycle 1 %
RL VGS VGS
Wave 010 %
VGS (on)
Form
VDD
ID 90 %
ID
Wave
Form
10 %
0
td (on)
ID
t tr d (off)
90 %
90 %
10 %
tf
ton toff
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2



  NEC Electronic Components Datasheet  

J449 Datasheet

2SJ449

No Preview Available !

J449 pdf
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
–100
–10
–1.0
TCR(=DaSt(oV2nG)5SLi=˚mC–it2e0dPVIoD)w(DeCr)DissipaIDDt1iC(o0p0nu1ls0mLeims)ms1itemPdWs = 100 s
–0.1 Single Pulse
–1.0 –10 –100
–1000
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
–100
Pulsed
–10
TA= –25 ˚C
25 ˚C
–1.0 75 ˚C
125 ˚C
–0.1
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0
VDS = –10 V
–5 –10 –15
VGS - Gate to Source Voltage - V
2SJ449
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
30
25
20
15
10
5
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
–20
–16 VGS= –20 V
–10 V
–12
–8
–4
0 –5 –10 –15 –20
VDS - Drain to Source Voltage - V
3




Part Number J449
Description 2SJ449
Maker NEC
Total Page 8 Pages
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