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  NEC Electronic Components Datasheet  

2SB549 Datasheet

(2SB548) PNP/NPN Silicon Epitaxial Transistor

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2SB549 pdf
DATA SHEET
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
• Ideal for audio amplifier drivers with 30 W to 50 W output
• High voltage
• Available for small mount spaces due to small and thin package
• Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Total power dissipation
Total power dissipation
Symbol
2SB548/ 2SB549/
2SD414 2SD415
VCBO
100/120
VCEO
80/80 100/100
VEBO
5.0/5.0
IC(DC)
0.8/0.8
IC(pulse)*
1.5/1.5
PT (Ta = 25°C)
1.0
PT (Tc = 25°C)
10
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
* PW 10 ms, duty cycle 50%
Unit
V
V
V
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = 80/80 V, IE = 0
VEB = 3.0/3.0 V, IC = 0
VCE = 5.0/5.0 V, IC = 2.0/2.0 mA*
VCE = 5.0/5.0 V, IC = 200/200 mA*
IC = 500/500 mA, IB = 50/50 mA*
IC = 500/500 mA, IB = 50/50 mA*
VCE = 5.0/5.0 V, IC = 100/100 mA
VCB = 10/10 V, IE = 0, f = 1.0 MHz
* Pulse test PW 350 µs, duty cycle 2%
hFE2 CLASSIFICATION
Marking
hFE2
S
40 to 80
R
60 to 120
Q
100 to 200
P
160 to 320
MIN.
20
40
TYP.
MAX.
1.0/1.0
1.0/1.0
90
0.4/0.3
0.9/0.9
70/45
25/15
320
2.0/2.0
1.5/1.5
Unit
µA
µA
V
V
MHz
pF
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928


  NEC Electronic Components Datasheet  

2SB549 Datasheet

(2SB548) PNP/NPN Silicon Epitaxial Transistor

No Preview Available !

2SB549 pdf
TYPICAL CHARACTERISTICS (Ta = 25°C)
Note
Note
1. 1 mm aluminum board
for heatsink
2. No insulating board
3. Silicon grease coating
4. Horizontal level
With infinite heatsink
Without te heatsink
Temperature T (°C)
2SB548, 549/2SD414, 415
Case Temperature Tc (°C)
Note
1. Tc = 25 °C
2. Derate the dissipation limited
area by case temperature and
duty cycle.
3. S/b limited area is a single
pulse. Derate this area by case
temperature.
Collector to Emitter Voltage VCE (V)
Note
1. Tc = 25 °C
2. Derate the dissipation limited
area by case temperature and
duty cycle.
3. S/b limited area is a single
pulse. Derate this area by
Collector to Emitter Voltage VCE (V)
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
2 Data Sheet D16141EJ2V0DS


Part Number 2SB549
Description (2SB548) PNP/NPN Silicon Epitaxial Transistor
Maker NEC
Total Page 4 Pages
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