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MW7IC2040GNR1 Datasheet

RF LDMOS Wideband Integrated

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MW7IC2040GNR1 pdf
Freescale Semiconductor
Technical Data
Document Number: MW7IC2040N
Rev. 0, 2/2009
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2040N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1805 to 1990 MHz. This multi - stage
www.datasshtreuect4tuur.ceoims rated for 24 to 32 Volt operation and covers all typical cellular base
station modulations.
Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 32 dB
Power Added Efficiency — 17.5%
ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 40 Watts
CW Pout.
Typical Pout @ 1 dB Compression Point ' 30 Watts CW
GSM EDGE Application
T4y3p0PicmoawAl eG, rPSGoMuatiEn=D—1G63EW3PadettBrsfoArvmga.,n1c8e0: 5V-D1D8=8028MVHozlts, IDQ1 = 90 mA, IDQ2 =
Power Added Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1.5% rms
GSM Application
Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA,
PoPuto=we4r0GWaaintts—C3W1,
1805
dB
-
1880
MHz
and
1930 -
1990
MHz
Power Added Efficiency — 50%
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current Temperature Compensation with Enable/
Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
MW7IC2040NR1
MW7IC2040GNR1
MW7IC2040NBR1
1930- 1990 MHz, 1805 - 1880 MHz,
4 W AVG., 28 V
SINGLE W - CDMA, GSM EDGE, GSM
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC2040NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC2040GNR1
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC2040NBR1
GND
VDS1
VGS2
VGS1
NC
RFin
1
2
3
4
5
6
16 GND
15 NC
14 RFout/VDS2
NC 7
RFin
RFout/VDS2
VGS1
8
VGS2
9
VDS1 10
13 NC
VGS1 Quiescent Current
GND 11
12 GND
VGS2 Temperature Compensation (1)
(Top View)
VDS1 Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
1


Motorola Electronic Components Datasheet

MW7IC2040GNR1 Datasheet

RF LDMOS Wideband Integrated

No Preview Available !

MW7IC2040GNR1 pdf
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
www.datasheet4u.com
Operating Junction
Temperature
(1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
Pin
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +10
32, +0
- 65 to +150
150
225
25
Value (2,3)
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Unit
°C/W
W - CDMA
(Pout = 4 W Avg., Case Temperature = 73°C)
Stage 1, 28 Vdc, IDQ1 = 130 mA
Stage 2, 28 Vdc, IDQ2 = 330 mA
4.0
1.5
GSM EDGE
(Pout = 16 W Avg., Case Temperature = 76°C)
GSM
(Pout = 40 W Avg., Case Temperature = 79°C)
Table 3. ESD Protection Characteristics
Stage 1, 28 Vdc, IDQ1 = 130 mA
Stage 2, 28 Vdc, IDQ2 = 330 mA
Stage 1, 28 Vdc, IDQ1 = 130 mA
Stage 2, 28 Vdc, IDQ2 = 330 mA
4.1
1.4
3.9
1.3
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IDSS
10 μAdc
IDSS
1 μAdc
IGSS
1 μAdc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 25 μAdc)
VGS(th)
1.2
2
2.7 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 130 mAdc)
VGS(Q)
2.7
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 130 mAdc, Measured in Functional Test)
VGG(Q)
13
14.5
16
Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MW7IC2040GNR1
Description RF LDMOS Wideband Integrated
Maker Motorola Semiconductor Products
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