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Motorola Electronic Components Datasheet

MRF9085LR3 Datasheet

RF POWER MOSFETs

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MRF9085LR3 pdf
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9085/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
www.datasfrheeqeut4eun.ccoiems from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
TISy-p9ic7alCCDDMMAAPPiloetr,foSrymnacn, cPea@gin8g8, 0TrMafHficz,C2o6dVeoslt8s,TIhDrQou=g7h0103mA
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: - 45.0 dBc @ 30 kHz BW
1.98 MHz: - 60.0 dBc @ 30 kHz BW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40µ″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9085LR3
MRF9085LSR3
880 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF9085LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF9085LSR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
65
- 0.5, +15
250
1.43
Vdc
Vdc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg - 65 to +150 °C
TJ 200 °C
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
RθJC 0.7 °C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9085LR3 MRF9085LSR3
1


Motorola Electronic Components Datasheet

MRF9085LR3 Datasheet

RF POWER MOSFETs

No Preview Available !

MRF9085LR3 pdf
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
MRF9085LR3
MRF9085LSR3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
www.datasheet4u.com
Characteristic
Symbol
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
VGS(Q)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
(1) Part is internally input matched.
Min
2.0
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
Typ Max Unit
— 10 µAdc
— 1 µAdc
— 1 µAdc
— 4.0 Vdc
3.7 — Vdc
0.19 0.4 Vdc
8.0 —
S
73 — pF
2.9 — pF
(continued)
MRF9085LR3 MRF9085LSR3
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com


Part Number MRF9085LR3
Description RF POWER MOSFETs
Maker Motorola
Total Page 8 Pages
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