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Motorola Electronic Components Datasheet

MRF9080 Datasheet

RF POWER FIELD EFFECT TRANSISTORS

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MRF9080 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9080/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband
www.dataspheerefot4rum.caonmce of these devices make them ideal for large–signal, common–
source amplifier applications in 26 volt base station equipment.
Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MRF9080
MRF9080R3
MRF9080SR3
MRF9080LSR3
GSM 900 MHz FREQUENCY BAND,
75 W, 26 V
LATERAL N–CHANNEL
BROADBAND RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF9080
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465A–06, STYLE 1
NI–780S
MRF9080SR3, MRF9080LSR3
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
–0.5, +15
250
1.43
–65 to +200
200
Class
1 (Minimum)
M1 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Symbol
RθJC
Max
0.7
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3
1


Motorola Electronic Components Datasheet

MRF9080 Datasheet

RF POWER FIELD EFFECT TRANSISTORS

No Preview Available !

MRF9080 pdf
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vds, VGS = 0)
www.daGtasteheSeot4uurc.ceoLmeakage Current
(VGS = 5 Vdc, VDS = 0 )
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Common–Source Amplifier Power Gain @ 70 W (Min)
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Drain Efficiency @ Pout = 70 W
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Drain Efficiency @ P1dB
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Input Return Loss
(VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
IDSS
IDSS
IGSS
VGS(th)
VGS(Q)
VDS(on)
gfs
Coss
Crss
P1dB
Gps
η1
η2
IRL
Ψ
— — 10 µAdc
——
1 µAdc
——
1 µAdc
2.0 — 4.0 Vdc
— 3.7 — Vdc
— 0.19 0.4 Vdc
— 8.0 —
S
— 73 — pF
— 2.9 — pF
68 75 —
17 18.5 20
47 52 —
— 55 —
9.5 12.5 —
W
dB
%
%
dB
No Degradation In Output Power
Before and After Test
(1) Part is internally input matched.
(2) To meet application requirements, Motorola test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency
MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3
2
MOTOROLA RF DEVICE DATA


Part Number MRF9080
Description RF POWER FIELD EFFECT TRANSISTORS
Maker Motorola
Total Page 12 Pages
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