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Motorola Electronic Components Datasheet

MRF19090S Datasheet

RF POWER FIELD EFFECT TRANSISTORS

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MRF19090S pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19090/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for Class AB PCN and PCS base station applications with
www.datasfrheeqetu4eu.ncocmies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and
multicarrier amplifier applications.
Typical CDMA Performance: 1990 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9 Watts
Power Gain — 10 dB
Adjacent Channel Power —
885 kHz: –47 dBc @ 30 kHz BW
1.25 MHz: –55 dBc @ 12.5 kHz BW
2.25 MHz: –55 dBc @ 1 MHz BW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF19090
MRF19090S
MRF19090SR3
1990 MHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465B–03, STYLE 1
(NI–880)
(MRF19090)
CASE 465C–02, STYLE 1
(NI–880S)
(MRF19090S)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC > = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
270
1.54
–65 to +150
200
Class
1 (Minimum)
M3 (Minimum)
Max
0.65
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF19090 MRF19090S MRF19090SR3
1


Motorola Electronic Components Datasheet

MRF19090S Datasheet

RF POWER FIELD EFFECT TRANSISTORS

No Preview Available !

MRF19090S pdf
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µA)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
www.daGtasteheSeot4uurc.ceoLmeakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 1 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture)
TwoTone CommonSource Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
V(BR)DSS
IDSS
IGSS
gfs
VGS(th)
VGS(Q)
VDS(on)
Crss
Gps
TwoTone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
η
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IRL
Pout, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 90 W CW, f = 1990 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
P1dB
Ψ
(1) Part is internally matched both on input and output.
Min Typ Max Unit
65 — — Vdc
— — 10 µAdc
——
1 µAdc
7.2
S
2.0 4.0 Vdc
2.5 3.8 4.5 Vdc
0.10 Vdc
4.2 pF
10 11.5
dB
33 35 %
— –30 28 dBc
— –12
dB
90 W
No Degradation In Output Power
Before and After Test
MRF19090 MRF19090S MRF19090SR3
2
MOTOROLA RF DEVICE DATA


Part Number MRF19090S
Description RF POWER FIELD EFFECT TRANSISTORS
Maker Motorola
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