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Motorola Electronic Components Datasheet

MRF19085R3 Datasheet

RF Power Field Effect Transistors

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MRF19085R3 pdf
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19085/D
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
www.datas1h.e9ett4ou.2co.0mGHz . Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts,
IISDQ- 9=58C5D0MmAA,(PPioloutt,=S1y8ncW, PatatsginAgv,gT.,rfa1ff=ic
1960 MHz, f2 = 1962.5
Codes 8 Through 13)
MHz
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — - 51 dB
IM3 — - 36.5 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MAXIMUM RATINGS
MRF19085R3
MRF19085LR3
MRF19085SR3
MRF19085LSR3
1990 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF19085R3,MRF19085LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF19085SR3, MRF19085LSR3
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
65
- 0.5, +15
273
1.56
Vdc
Vdc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
Tstg - 65 to +150 °C
TJ 200 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
RθJC
0.79
°C/W
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
For More Information On This Product,
Go to: www.freescale.com
1


Motorola Electronic Components Datasheet

MRF19085R3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF19085R3 pdf
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
www.daGtaasteh-eSeot4uurc.ceoLmeakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
V(BR)DSS
65
— Vdc
IDSS
10 µAdc
IGSS
1 µAdc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 850 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
VGS(th)
VGS(Q)
VDS(on)
gfs
2
2.5
— 4 Vdc
3.5 4.5 Vdc
0.18 0.210 Vdc
6—S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss — 3.6 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Gps 12 13 —
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
η 21 23 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth @ f1 - 2.5 MHz and f2 = +2.5 MHz)
IMD
- 36.5
- 35
dBc
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth @ f1 - 885 MHz and f2 =+885 MHz)
ACPR
- 51 - 48 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
IRL — - 12 - 9 dB
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 850 mA, f = 1930 MHz, VSWR
= 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
MOTOROLA RF DEVICE DATA
2
For More Information On This Product,
Go to: www.freescale.com


Part Number MRF19085R3
Description RF Power Field Effect Transistors
Maker Motorola
Total Page 12 Pages
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