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Motorola Electronic Components Datasheet

MRF19045LR3 Datasheet

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF19045LR3 pdf
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19045/D
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
www.datas1h.e9ett4ou.2co.0mGHz . Suitable for TDMA, CDMA and multicarrier amplifier
applications.
Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA
Multi - carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
885 kHz: - 50 dBc @ 30 kHz BW
IM3 — - 37 dBc
100% Tested Under 2 - Carrier N - CDMA
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40µ″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19045LR3
MRF19045LSR3
1990 MHz, 45 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF19045LR3
MAXIMUM RATINGS
CASE 465F - 04, STYLE 1
NI - 400S
MRF19045LSR3
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
65
- 0.5, +15
105
0.60
Vdc
Vdc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg - 65 to +150 °C
TJ 200 °C
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
RθJC
1.65
Class
2 (Minimum)
°C/W
Machine Model
M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 6
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF19045LR3 MRF19045LSR3
1


Motorola Electronic Components Datasheet

MRF19045LR3 Datasheet

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

No Preview Available !

MRF19045LR3 pdf
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
www.daGtaasteh-eSeot4uurc.ceoLmeakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
V(BR)DSS
65
— Vdc
IDSS
10 µAdc
IGSS
1 µAdc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 550 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
VGS(th)
VGS(Q)
VDS(on)
gfs
2
3
— 4 Vdc
3.8 5 Vdc
0.19 0.21 Vdc
4.2 —
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss — 1.8 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in
1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth.
Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
Gps
13 14.5 —
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
η
21 23.5 —
%
3rd Order Intermodulation Distortion
IM3 — - 37 - 35 dBc
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz; IM3 Measured in a 1.2288 MHz Integrated Bandwidth
Centered at f1 - 2.5 Mhz and f2 +2.5 MHz, Referenced to the Carrier
Channel Power)
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2-carrier N-CDMA, IDQ = 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; ACPR measured in a 30 kHz Integrated Bandwith
Centered at f1 - 885 kHz and f2 +885 kHz)
ACPR
- 51 - 45 dBc
Input Return Loss
IRL — - 16 - 9 dB
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz,
f2 = 1990 MHz)
Pout, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 550 mA, f = 1990 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 45 W CW, IDQ = 550 mA,
f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
P1dB
Ψ
— 45 — W
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF19045LR3 MRF19045LSR3
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com


Part Number MRF19045LR3
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Maker Motorola
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