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Motorola Electronic Components Datasheet

MPSW63 Datasheet

One Watt Darlington Transistors

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MPSW63 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Darlington Transistors
PNP Silicon
COLLECTOR 3
BASE
2
Order this document
by MPSW63/D
MPSW63
MPSW64 *
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
MPSW63
MPSW64
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
–30
–30
–10
–500
1.0
8.0
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5 Watts
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –100 µAdc, VBE = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –10 Vdc, IC = 0)
Symbol
V(BR)CES
ICBO
IEBO
1
23
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Min Max Unit
–30 — Vdc
–100
nAdc
–100
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1


Motorola Electronic Components Datasheet

MPSW63 Datasheet

One Watt Darlington Transistors

No Preview Available !

MPSW63 pdf
MPSW63 MPSW64
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –10 mAdc, VCE = –5.0 Vdc)
MPSW63
MPSW64
hFE
(IC = –100 mAdc, VCE = –5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –0.1 mAdc)
Base–Emitter On Voltage
(IC = –100 mAdc, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. fT = |hfe| ftest.
MPSW63
MPSW64
VCE(sat)
VBE(on)
fT
Min
5,000
10,000
10,000
20,000
125
Max
–1.5
–2.0
Unit
Vdc
Vdc
MHz
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
–0.3
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 125°C
25°C
–55°C
VCE = –2.0 V
–5.0 V
–0.5 –0.7 –1.0
–2.0 –3.0 –5.0 –7.0 –10
–20
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
–30
–50 –70 –100
–10 V
–200 –300
–2.0
TJ = 25°C
–1.6 VBE(sat) @ IC/IB = 100
–1.2 VBE(on) @ VCE = –5.0 V
–0.8 VCE(sat) @ IC/IB = 1000
–0.4
IC/IB = 100
0
–0.3 –0.5 –1.0
–3.0 –5.0 –10 –30 –50 –100
IC, COLLECTOR CURRENT (mA)
Figure 2. “ON” Voltage
–300
–2.0
TJ = 25°C
–1.8
–1.6
–50 mA –100 mA –175 mA –300 mA
–1.4
–1.2
–1.0
–0.8
IC = –10 mA
–0.6
–0.1 –0.3 –1.0 –3.0 –10 –30 –100 –300 –1 k –3 k –10 k
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MPSW63
Description One Watt Darlington Transistors
Maker Motorola
Total Page 4 Pages
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