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Motorola Electronic Components Datasheet

MPSW45 Datasheet

One Watt Darlington Transistors

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MPSW45 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
Order this document
by MPSW45/D
MPSW45
MPSW45A*
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol MPSW45 MPSW45A Unit
VCES
VCBO
VEBO
IC
PD
40 50
50 60
12 12
1.0 1.0
1.0
8.0
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
PD 2.5 Watts
20 mW/°C
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
Thermal Resistance, Junction to Case
RqJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
MPSW45
MPSW45A
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSW45
MPSW45A
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
MPSW45
MPSW45A
Symbol
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Min Max Unit
Vdc
40 —
50 —
Vdc
50 —
60 —
12 — Vdc
nAdc
— 100
— 100
— 100 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1


Motorola Electronic Components Datasheet

MPSW45 Datasheet

One Watt Darlington Transistors

No Preview Available !

MPSW45 pdf
MPSW45 MPSW45A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base– Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base – Emitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Ccb
Min Max
25,000
15,000
4,000
150,000
1.5
— 2.0
— 2.0
100 —
— 6.0
Unit
Vdc
Vdc
Vdc
MHz
pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MPSW45
Description One Watt Darlington Transistors
Maker Motorola
Total Page 6 Pages
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