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Motorola Electronic Components Datasheet

MPSW14 Datasheet

One Watt Darlington Transistors

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MPSW14 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
Order this document
by MPSW13/D
MPSW13
MPSW14
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
30 Vdc
30 Vdc
10 Vdc
1.0 Adc
1.0 Watts
8.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5 Watts
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
Symbol
V(BR)CES
ICBO
IEBO
1
23
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Min Max Unit
30 — Vdc
— 100 nAdc
— 100 nAdc
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1


Motorola Electronic Components Datasheet

MPSW14 Datasheet

One Watt Darlington Transistors

No Preview Available !

MPSW14 pdf
MPSW13 MPSW14
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
MPSW13
MPSW14
hFE
(IC = 100 mAdc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. fT = |hfe| ftest.
MPSW13
MPSW14
VCE(sat)
VBE(on)
fT
Min
5,000
10,000
10,000
20,000
125
Max
1.5
2.0
Unit
Vdc
Vdc
MHz
CURRENT LIMIT
3.0 k THERMAL LIMIT
DUTY CYCLE 10%
SECOND BREAKDOWN LIMIT
2.0 k
100 ms
1.0 ms
1.0 k
1.0 s
500
TA = 25°C
TC = 25°C
200
1.5
2.0 5.0 10 20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region — Safe Operating
Area
30
200 k
100 k
70 k
50 k
TJ = 125°C
25°C
30 k
20 k
10 k
7.0 k
5.0 k –55°C
3.0 k
2.0 k
5.0 7.0 10
VCE = 5.0 V
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
3.0
TJ = 25°C
2.5
IC = IC =
10 mA 50 mA
IC = IC =
250 mA 500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MPSW14
Description One Watt Darlington Transistors
Maker Motorola
Total Page 4 Pages
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