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Motorola Electronic Components Datasheet

MPSW10 Datasheet

One Watt High Voltage Transistor

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MPSW10 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW10/D
One Watt High Voltage Transistor
NPN Silicon
COLLECTOR
3
2
BASE
MPSW10
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
300 Vdc
300 Vdc
6.0 Vdc
500 mAdc
1.0 Watt
8.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5 Watts
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
12 3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Min Max Unit
300 — Vdc
300 — Vdc
6.0 — Vdc
— 0.2 µAdc
— 0.1 µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1


Motorola Electronic Components Datasheet

MPSW10 Datasheet

One Watt High Voltage Transistor

No Preview Available !

MPSW10 pdf
MPSW10
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 30 mAdc, VCE = 10 Vdc)
Collector–Emitter Saturation Voltage
(IC = 30 mAdc, IB = 3.0 mAdc)
hFE
VCE(sat)
25
40
40
0.75 Vdc
Base–Emitter On Voltage
(IC = 30 mAdc, VCE = 10 Vdc)
VBE(on)
0.85 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
fT 45 — MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Ccb — 3.0 pF
200
VCE = 10 V
100
70
50
TJ = 125°C
25°C
–55°C
30
20
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
5.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
50 70 100
0.6
0.5
0.4
0.3
0.2
IC = 10 mA
0.1
TJ = 25°C
IC = 30 mA
IC = 20 mA
0
0.1 0.2
0.5 1.0 2.0 5.0 10 20 30
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
2.5
+2.0
1.5
IC
IB
10
25°C to 125°C
1.0
0.5 RθVC for VCE(sat)
0
–0.5
–55°C to 25°C
–1.0
–1.5 RθVB for VBE
–2.0
–55°C to 125°C
–2.5
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70
100
Figure 4. Temperature Coefficients
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MPSW10
Description One Watt High Voltage Transistor
Maker Motorola
Total Page 4 Pages
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