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Motorola Electronic Components Datasheet

MPSW01 Datasheet

One Watt High Current Transistors

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MPSW01 pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSW01/D
One Watt High Current Transistors
NPN Silicon
COLLECTOR
3
2
BASE
MPSW01
MPSW01A*
*Motorola Preferred Device
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
MPSW01
MPSW01A
VCEO
30
40
Vdc
Collector – Base Voltage
MPSW01
MPSW01A
VCBO
40
50
Vdc
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
5.0
1000
1.0
8.0
Vdc
mAdc
Watts
mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 Watts
Derate above 25°C
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
Thermal Resistance, Junction to Case
RqJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPSW01
MPSW01A
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
MPSW01
MPSW01A
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MPSW01
MPSW01A
Preferred devices are Motorola recommended choices for future use and best overall value.
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
30
40
40
50
5.0
Max Unit
Vdc
Vdc
— Vdc
µAdc
0.1
0.1
0.1 µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1


Motorola Electronic Components Datasheet

MPSW01 Datasheet

One Watt High Current Transistors

No Preview Available !

MPSW01 pdf
MPSW01 MPSW01A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
hFE
VCE(sat)
55
60
50
0.5 Vdc
Base–Emitter On Voltage
(IC = 1000 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.2 Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT 50 — MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Cobo
20
pF
300
200
100
70
VCE = 1.0 V
50 TJ = 25°C
30
10
20
50 100 200
500 1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
0.4
IC =
0.2 10 mA
IC =
50 mA
IC =
1000 mA
IC =
IC =
100 mA
IC = 500 mA
250 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
IB, BASE CURRENT (mA)
10 20
50 100
Figure 2. Collector Saturation Region
1.0
TJ = 25°C
0.8 VBE(sat) @ IC/IB = 10
0.6 VBE(on) @ VCE = 1.0 V
0.4
0.2 VCE(sat) @ IC/IB = 10
0
1.0 2.0
5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
–0.8
–1.2
–1.6
qVB FOR VBE
–2.0
–2.4
–2.8
1.0 2.0
5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficient
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MPSW01
Description One Watt High Current Transistors
Maker Motorola
Total Page 4 Pages
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