| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS6507/D Amplifier Transistor NPN Silicon 2 BASE COLLECTOR 3 MPS6507 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating an... |
| Features |
ge (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 60°C) V(BR)CEO V(BR)CBO V(BR)EBO ICBO — — — — 50 1.0 nAdc mAdc 20 30 3.0 — — — — — — Vdc Vdc Vdc ON CHARACTERISTICS DC Current Gain(2) (IC = 2.0 mAdc, VCE = 10 Vdc) hFE 25 75 — — SMALL –SIG... |
| Datasheet |
 MPS6507 Datasheet - 59.63KB |
