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Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RM20HA-XXF Datasheet Preview

RM20HA-XXF Datasheet

HIGH SPEED SWITCHING USE INSULATED TYPE

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RM20HA-XXF pdf
RM20HA-XXF
MITSUBISHI FAST RECOVERY DIODE MODULES
RM20HA-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
IDC DC current .................................. 20A
VRRM Repetitive peak reverse voltage
.............................. 600/1000/1200V
trr Reverse recovery time ............. 0.8µs
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Free wheel use, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
φ4.2
6.35
0.8 (K)
(A)
7.0
19.5
30.2
39.0
φ1.7
φ2.4
(Fig. A)
LABEL
R2.1
Dimensions in mm
6.35
Fig. A
φ1.7
φ2.4
Feb.1999



Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RM20HA-XXF Datasheet Preview

RM20HA-XXF Datasheet

HIGH SPEED SWITCHING USE INSULATED TYPE

No Preview Available !

RM20HA-XXF pdf
MITSUBISHI FAST RECOVERY DIODE MODULES
RM20HA-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C)
Symbol
Parameter
VRRM
VDRM
VR (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
12
600
720
480
Voltage class
20
1000
1100
800
Symbol
IDC
IFSM
I2t
Tj
Tstg
Viso
Parameter
DC current
Surge (non-repetitive) forward current
I2t for fusing
Junction temperature
Storage temperature
Isolation voltage
Conditions
Resistive load, TC=114°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
— Mounting torque
Mounting screw M4
— Weight
Typical value
24
1200
1350
960
Ratings
20
400
6.7×102
–40~+150
–40~+125
2500
0.98~1.47
10~15
25
Unit
V
V
V
Unit
A
A
A2s
°C
°C
V
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
trr
Qrr
Rth (j-c)
Rth (c-f)
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
*1 12 class: VR=300V 20, 24 class: VR=600V
Tj=150°C, VRRM applied
Tj=25°C, IFM=20A, instantaneous meas.
IFM=20A, di/dt=–50A/µs, VR=300/600V*1, Tj=150°C
Junction to case
Case to fin, conductive grease applied
Min.
Limits
Typ.
Max.
5.0
1.5
0.8
15
1.2
0.8
Unit
mA
V
µs
µC
°C/ W
°C/ W
Feb.1999


Part Number RM20HA-XXF
Description HIGH SPEED SWITCHING USE INSULATED TYPE
Maker Mitsubishi Electric Semiconductor
Total Page 3 Pages
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