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Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RM20DA-XXS Datasheet Preview

RM20DA-XXS Datasheet

MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE

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RM20DA-XXS pdf
RM20DA/CA/C1A-XXS
MITSUBISHI FAST RECOVERY DIODE MODULES
RM20DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
IDC DC current .................................. 20A
VRRM Repetitive peak reverse voltage
...................... 300/600V
trr Reverse recovery time ............. 0.4µs
Insulated Type
APPLICATION
Free wheel use, Welder
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
53.5
43.3
16
φ5.3
3.5
8
33
R6
3–M4
3.5
CA
C1A
DA
LABEL
Feb.1999



Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RM20DA-XXS Datasheet Preview

RM20DA-XXS Datasheet

MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE

No Preview Available !

RM20DA-XXS pdf
MITSUBISHI FAST RECOVERY DIODE MODULES
RM20DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
Parameter
VRRM
VDRM
VR (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
Voltage class
6
300
360
240
Symbol
IDC
IFSM
I2t
Tj
Tstg
Viso
Parameter
DC current
Surge (non-repetitive) forward current
I2t for fusing
Junction temperature
Storage temperature
Isolution voltage
Conditions
Resistive load, TC=93°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
— Mounting torque
Main terminal screw M4
Mounting screw M5
— Weight
Typical value
12
600
720
480
Ratings
20
400
6.7×102
–40~+150
–40~+125
2500
0.98~1.47
10~15
1.47~1.96
15~20
90
Unit
V
V
V
Unit
A
A
A2s
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IRRM
VFM
trr
Qrr
trr
Qrr
Rth (j-c)
Rth (c-f)
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
*1 6 class: VR=150V 12class: VR=300V
Test conditions
Tj=150°C, VRRM applied
Tj=25°C, IFM=20A, instantaneous meas.
IFM=20A, di/dt=–50A/µs, VR=150/300V*1, Tj=25°C
IFM=20A, di/dt=–50A/µs, VR=150/300V*1, Tj=150°C
Junction to case
Case to fin, conductive grease applied
Min.
Limits
Typ.
1.6
Max.
10
1.8
0.2
0.5
0.4
1.5
1.2
0.3
Unit
mA
V
µs
µC
µs
µC
°C/ W
°C/ W
Feb.1999


Part Number RM20DA-XXS
Description MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
Maker Mitsubishi Electric Semiconductor
Total Page 3 Pages
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