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Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RM200HA-24F Datasheet Preview

RM200HA-24F Datasheet

HIGH SPEED SWITCHING USE INSULATED TYPE

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RM200HA-24F pdf
RM200HA-20F,-24F
MITSUBISHI FAST RECOVERY DIODE MODULES
RM200HA-20F,-24F
HIGH SPEED SWITCHING USE
INSULATED TYPE
IDC DC current ................................ 200A
VRRM Repetitive peak reverse voltage
................. 1000/1200V
trr Reverse recovery time ............. 0.8µs
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Free wheel use, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
53.5
43.3
16
Dimensions in mm
φ5.3
3.5
R6
8 3–M4
33
3.5
LABEL
Feb.1999



Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

RM200HA-24F Datasheet Preview

RM200HA-24F Datasheet

HIGH SPEED SWITCHING USE INSULATED TYPE

No Preview Available !

RM200HA-24F pdf
MITSUBISHI FAST RECOVERY DIODE MODULES
RM200HA-20F,-24F
HIGH SPEED SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C)
Symbol
Parameter
VRRM
VDRM
VR (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
20
1000
1100
800
Voltage class
Symbol
IDC
IFSM
I2t
Tj
Tstg
Viso
Parameter
DC output current
Surge (non-repetitive) forward current
I2t for fusing
Junction temperature
Storage temperature
Isolation voltage
Conditions
Resistive load, TC=75°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
— Mounting torque
Main terminal screw M4
Mounting screw M5
— Weight
Typical value
24
1200
1350
960
Ratings
200
4000
6.7 × 104
–40~150
–40~125
2500
0.98~1.47
10~15
1.47~1.96
15~20
90
Unit
V
V
V
Unit
A
A
A2s
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IRRM
VFM
trr
Qrr
Rth (j-c)
Rth (c-f)
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
Tj=150°C, VRRM applied
Tj=25°C, IFM=200A, instantaneous meas.
IFM=200A, di/dt=–400A/µs, VR=600V, Tj=150°C
Junction to case
Case to fin, conductive grease applied
Min.
Limits
Typ.
Max.
40
1.5
0.8
130
0.25
0.15
Unit
mA
V
µs
µC
°C/ W
°C/ W
Feb.1999


Part Number RM200HA-24F
Description HIGH SPEED SWITCHING USE INSULATED TYPE
Maker Mitsubishi Electric Semiconductor
Total Page 3 Pages
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