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Mitsubishi Electric
Mitsubishi Electric

FM200TU-3A Datasheet Preview

FM200TU-3A Datasheet

HIGH POWER SWITCHING USE INSULATED PACKAGE

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FM200TU-3A pdf
FM200TU-3A
MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
ID(rms) .......................................................... 100A
VDSS ............................................................. 150V
Insulated Type
6-elements in a pack
Thermistor inside
UL Recognized
Yellow Card No.E80276
File No.E80271
APPLICATION
AC motor control of forklift (battery power source), UPS
OUTLINE DRAWING & CIRCUIT DIAGRAM
www.DataSheet4U.com
6.5
15.2
16.5 16
36
10
30
7
110
97
70.9
32
10
7
16
36
30
Dimensions in mm
35
26
CIRCUIT DIAGRAM
P
(7)GUP
(1)SUP
U
(8)GVP
(2)SVP
V
(10)GUN
(4)SUN
N
(11)GVN
(5)SVN
(15.8)
3 6.5
71
12 6
13
14
3
(8.7)
14
20
16.5
U
32
A
V
14
20
32
W
14
20
B
14
(SCREWING DEPTH)
Tc measured point
Housing Type of A and B
(Tyco Electronics P/N:)
A: 917353-1
B: 179838-1
(9)GWP
(3)SWP
W
(12)GWN
(6)SWN
(13) (1)SUP (2)SVP (3)SWP (4)SUN (5)SVN (6)SWN
A
(7)GUP (8)GVP (9)GWP (10)GUN (11)GVN (12)GWN
(14) (13)TH1 (14)TH2
B
May 2006



Mitsubishi Electric
Mitsubishi Electric

FM200TU-3A Datasheet Preview

FM200TU-3A Datasheet

HIGH POWER SWITCHING USE INSULATED PACKAGE

No Preview Available !

FM200TU-3A pdf
MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS*1
ISM*1
PD*4
PD*4
Tch
Tstg
Viso
Item
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
— Mounting torque
— Weight
G-S Short
D-S Short
TC’ = 122°C*3
Pulse*2
L = 10µH Pulse*2
Conditions
Pulse*2
TC = 25°C
TC’ = 25°C*3
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting M6
Typical value
Ratings
150
±20
100
200
100
100
200
410
560
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600
Unit
V
V
A
A
A
A
A
W
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.)
Symbol
Item
Conditions
IDSS
VGS(th)
IGSS
rDS(ON)
(chip)
VDS(ON)
(chip)
R(lead)
Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf
trr*1
Qrr*1
VSD*1
Rth(ch-c)
Rth(ch-c’)
Rth(c-f)
Rth(c’-f’)
Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage
Lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance
VDS = VDSS, VGS = 0V
ID = 10mA, VDS = 10V
VGS = VGSS, VDS = 0V
ID = 100A
VGS = 15V
ID = 100A
VGS = 15V
ID = 100A
terminal-chip
VDS = 10V
VGS = 0V
VDD = 80V, ID = 100A, VGS = 15V
Tch = 25°C
Tch = 125°C
Tch = 25°C
Tch = 125°C
Tch = 25°C
Tch = 125°C
VDD = 80V, ID = 100A, VGS1 = VGS2 = 15V
RG = 13, Inductive load switching operation
IS = 100A
IS = 100A, VGS = 0V
MOSFET part (1/6 module)*7
MOSFET part (1/6 module)*3
Case to fin, Thermal grease Applied*8 (1/6 module)
Case to fin, Thermal grease Applied*3, *8 (1/6 module)
Limits
Min. Typ. Max. Unit
——
1 mA
4.7 6 7.3 V
— — 1.5 µA
— 4.8 6.6
— 9.1 — m
0.48
0.66
V
— 0.91 —
— 1.2 —
— 1.68 — m
— — 50
——
7 nF
——
4
— 820 — nC
— — 400
— — 250
ns
— — 450
— — 200
— — 200 ns
— 6.5 — µC
— — 1.3 V
— — 0.30
— — 0.22
— 0.1 — °C/W
— 0.09 —
THERMISTOR PART
Symbol
Parameter
Conditions
Limits
Min. Typ.
RTH*6
B*6
Resistance
B Constant
TTH = 25°C*5
Resistance at TTH = 25°C, 50°C*5
— 100
— 4000
*1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).
*2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating.
*3: TC’ measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips.
*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5: TTH is thermistor temperature.
*6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K)
*7: TC measured point is shown in page OUTLINE DRAWING.
*8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”.
Max.
Unit
k
K
May 2006


Part Number FM200TU-3A
Description HIGH POWER SWITCHING USE INSULATED PACKAGE
Maker Mitsubishi Electric
Total Page 5 Pages
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