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U309 Datasheet

Amplifier

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U309 pdf
U309
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U309
The U309 is a high frequency n-channel JFET offering a
wide range and low noise performance. The
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX U309 
hermetically sealed TO-18 package is well suited for
high reliability and harsh environment applications.
(See Packaging Information).
U309 Benefits:
ƒ High Power Low Noise gain
ƒ Dynamic Range greater than 100dB
ƒ Easily matched to 75input
U309 Applications:
OUTSTANDING HIGH FREQUENCY GAIN  
LOW HIGH FREQUENCY NOISE 
ABSOLUTE MAXIMUM RATINGS @ 25°C1  
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
MAXIMUM CURRENT
Gpg = 11.5dB 
NF = 2.7dB 
55°C to +150°C 
55°C to +135°C 
500mW 
ƒ UHV / VHF Amplifiers
ƒ Mixers
ƒ Oscillators
Gate Current 
MAXIMUM VOLTAGES 
Gate to Drain Voltage or  Gate to Source Voltage 
 
10mA 
 ‐25V 
 
  
U309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN  TYP.  MAX  UNIT 
CONDITIONS 
BVGSS 
Gate to Source Breakdown Voltage  ‐25  ‐‐  ‐‐  V 
VDS = 0V, IG = ‐1µA 
VGS(F) 
Gate to Source Forward Voltage 
0.7  ‐‐ 
1 
VDS = 0V, IG = 10mA 
VGS(off) 
IDSS 
Gate to Source Cutoff Voltage 
1  ‐‐  ‐4 
Drain to Source Saturation Current2  12  ‐‐  30  mA 
VDS = 10V,  ID = 1nA 
VDS = 10V, VGS = 0V 
IG 
Gate Operating Current (Note 3) 
‐‐  ‐15  ‐‐  pA 
VDG = 9V,  ID = 10mA 
rDS(on) 
Drain to Source On Resistance 
‐‐  35  ‐‐ 
Ω 
VGS = 0V,  ID = 1mA 
 
 
    
 
U309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
MIN  TYP. 
gfs 
Forward Transconductance 
10  14 
gos 
Output Conductance 
‐‐  110 
Click ToCiss 
Input Capacitance 
‐‐  4 
MAX 
‐‐ 
250 
5 
Crss 
Reverse Transfer Capacitance 
‐‐  1.9  2.5 
BuyUNIT 
mS 
µS 
pF 
CONDITIONS 
VDS = 10V,   ID = 10mA , f = 1kHz 
VDS = 10V,   VGS = ‐10V , f = 1MHz  
en 
Equivalent Noise Voltage 
6 
‐‐ 
‐‐ 
nV/Hz 
VDS = 10V,    ID = 10mA ,  f = 100Hz 
 
 
    
 
U309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
MIN  TYP  MAX  UNIT 
CONDITIONS 
NF 
Noise Figure 
f = 105MHz 
‐‐ 
1.5 
‐‐ 
f = 450MHz 
‐‐ 
2.7 
‐‐ 
Gpg 
Power Gain3 
f = 105MHz 
‐‐ 
16 
‐‐ 
f = 450MHz 
‐‐ 
11.5 
‐‐ 
gfg 
Forward Transconductance  f = 105MHz 
‐‐ 
14 
‐‐ 
f = 450MHz 
‐‐ 
13 
‐‐ 
gog 
Output Conductance 
f = 105MHz 
‐‐ 
0.16 
‐‐ 
f = 450MHz 
‐‐ 
0.55 
‐‐ 
dB 
dB 
 
 
 
 
mS 
 
 
 
 
VDS = 10V,    ID = 10mA 
Note 1 ‐  Absolute maximum   ratings are   limiting values above which U309 serviceability may be impaired.  
Note 2 ‐  Pulse test : PW ≤ 3 00µs, Duty  Cycle ≤ 3% 
Note 3 ‐  Measured at optim  um input n oise match 
Micros s Components  Europe  
    
Available Packages:
U309 in TO-18
U309 in bare die.
TO-18 (Bottom View)
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
www.DataSheet4U.comInformation furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx


Part Number U309
Description Amplifier
Maker Micross
Total Page 1 Pages
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