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J112 Datasheet

Switching

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J112 pdf
J112
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J112
This n-channel JFET is optimised for low noise high
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The TO-92
package is well suited for cost sensitive applications
and mass production.
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX J112 
LOW GATE LEAKAGE CURRENT 
5pA 
FAST SWITCHING 
t(on) ≤ 4ns 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
(See Packaging Information).
Maximum Temperatures 
J112 Benefits:
ƒ Short Sample & Hold Aperture Time
ƒ Low insertion loss
ƒ Low Noise
J112 Applications:
ƒ Analog Switches
ƒ Commutators
ƒ Choppers
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
MAXIMUM CURRENT
Gate Current (Note 1) 
MAXIMUM VOLTAGES 
Gate to Drain Voltage 
Gate to Source Voltage 
55°C to +150°C 
55°C to +135°C 
360mW 
50mA 
VGDS = ‐35V 
VGSS = ‐35V 
  
J112 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN  TYP.  MAX  UNITS 
CONDITIONS 
BVGSS 
VGS(off) 
VGS(F) 
Gate to Source Breakdown Voltage 
Gate to Source Cutoff Voltage 
Gate to Source Forward Voltage 
35  ‐‐ 
1  ‐‐ 
‐‐  0.7 
‐‐   
5   
‐‐  V 
IG = 1µA,   VDS = 0V 
VDS = 5V, ID = 1µA 
IG = 1mA,   VDS = 0V 
IDSS  Drain to Source Saturation Current (Note 2)  5  ‐‐  ‐‐ 
IGSS 
Gate Reverse Current 
‐‐  ‐0.005  ‐1 
mA 
nA 
VDS = 15V, VGS = 0V 
VGS = ‐15V,  VDS = 0V 
IG 
Gate Operating Current 
‐‐  ‐0.5  ‐‐ 
pA 
VDG = 15V,  ID = 10mA 
ID(off) 
Drain Cutoff Current 
‐‐   0.005  1 
nA 
VDS = 5V, VGS = ‐10V 
rDS(on) 
 
Drain to Source On Resistance 
 
‐‐  ‐‐ 
  
J112 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
Click Togfs 
Forward Transconductance 
‐‐  6 
50 
 
MAX 
‐‐ 
BuyΩ 
 
UNITS 
mS 
IG = 1mA,  VDS = 0V 
 
CONDITIONS 
VDS = 20V,  ID = 1mA , f = 1kHz 
gos 
rDS(on) 
Output Conductance 
Drain to Source On Resistance 
‐‐  25  ‐‐  µS 
‐‐  ‐‐  50  Ω 
VGS = 0V, ID = 0mA,  f = 1kHz 
Ciss 
Input Capacitance 
‐‐  7  12  pF 
VDS = 0V, VGS = ‐10V, f = 1MHz 
Crss 
Reverse Transfer Capacitance 
‐‐  3  5 
 
en 
Equivalent Noise Voltage 
‐‐ 
3 
‐‐  nV/Hz 
VDG = 10V,  ID = 1mA , f = 1kHz 
 
 
    
 
J112 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
  UNITS 
CONDITIONS 
td(on) 
tr 
td(off) 
tf 
Turn On Time 
Turn On Rise Time 
Turn Off Time 
Turn Off Fall Time 
2   
2   
ns 
6 
15 
VDD = 10V 
VGS(H) = 0V 
 
See Switching Circuit 
Note 1 ‐ Absolute maximum ratings are limiting values above which J112 serviceabili t  y  m   a  y    b  e    i m   p  a  i r e  d  .    N  o   t e   2     P  u  l s  e   t e  s  t :   P  W      3  0  0    µ  s  ,  D  u  t  y  C  y  c  l e     3  %   
J112 SWITCHING CIRCUIT PARAMETERS                                                                                                                          
VGS(L) 
RL 
ID(on) 
 
7V 
1600Ω 
6mA 
 
 
 
 
 
Available Packages:
J112 in TO-92
J112 in bare die.
TO-92 (Bottom View)
SWITCHING TEST CIRCUIT
Micros s Components E  urope  
    
    
Please contact Micross for full
package and die dimensions
    
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.


Part Number J112
Description Switching
Maker Micross
Total Page 1 Pages
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