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  Microsemi Electronic Components Datasheet  

MSAHZ52F120A Datasheet

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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MSAHZ52F120A pdf
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2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAGZ52F120A
MSAHZ52F120A
Features
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: MSAH(G)Z52F120B
high frequency IGBT, low switching losses
anti-parallel FREDiode (MSAHZ52F120A only)
1200 Volts
52 Amps
3.2 Volts vce(sat)
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ 25°C
Collector-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
90°C
Tj= 25°C
Tj=
Peak Collector Current (pulse width limited by Tjmax,)
90°C
Tj= 25°C
Tj=
Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200µH,
RG= 25, Tj= 25°C
Short circuit current (SOA) , VCE1200V, TJ= 150°C, tsc10µs
Short circuit (reverse) current (RBSOA) , VCE1200V, TJ= 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, MSAHZ52F120A only)
Pulse Source Current (Body Diode, MSAHZ52F120A only)
Thermal Resistance, Junction to Case
Mechanical Outline
BVCES
BVCGR
VGES
VGEM
IC25
IC90
ICM(25)
ICM(90)
EAS
IC(sc)
IC(sc)RBSOA
PD
Tj
Tstg
IS
ISM
θJC
MAX.
1200
1200
+/-20
+/-30
52
33
104
66
65
260
66
300
-55 to +150
-55 to +150
50
100
0.4
COLLECTOR
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
mJ
A
A
Watts
°C
°C
Amps
Amps
°C/W
EMITTER (MS…A)
GATE (MS…B)
Datasheet# MSC0295A


  Microsemi Electronic Components Datasheet  

MSAHZ52F120A Datasheet

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

MSAHZ52F120A pdf
MSAGZ52F120Awww.DataSheet4U.com
MSAHZ52F120A
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
Collector-to-Emitter Saturation Voltage (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
INDUCTIVE LOAD, Tj= 125°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
INDUCTIVE LOAD, Tj= 125°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Antiparallel diode forward voltage (MSAHZ52F120A
only)
Antiparallel diode reverse recovery time
(MSAHZ52F120A only)
Antiparallel diode reverse recovery charge
(MSAHZ52F120A only)
Antiparallel diode peak recovery current
(MSAHZ52F120A only)
SYMBOL
BVCES
VGE(th)
IGES
ICES
VCE(sat)
gfs
Cies
Coes
Cres
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Qg
Qge
Qgc
VF
trr
Qrr
IRM
CONDITIONS
VGS = 0 V, IC = 250 µA
VCE = VGE, IC = 350 µA
VGE = ± 20VDC, VCE = 0
VCE =0.8BVCES
VGE = 0 V
VGE= 15V, IC= 25A
IC= 25A
IC= 60A
IC= 30A
VCE = 20 V; IC = 25 A
TJ = 25°C
T J = 125°C
TJ = 25°C
T J = 125°C
T J = 25°C
T J = 125°C
T J = 25°C
T J = 125°C
VGE = 0 V, VCE = 25 V, f = 1 MHz
VGE = 15 V, VCE = 600 V,
IC = 25 A, RG = 47 ,
L= 100 µH note 2, 3
VGE = 15 V, VCE = 600 V,
IC = 50 A, RG = 47 ,
L= 100 µH note 2, 3
VGE = 15 V, VCE = 600V, IC = 25A
IE= 10 A
T J = 25 °C
IE= 10 A
T J = 100 °C
IE= 10 A, dIE/dt= 100 A/us, T J= 25°C
IE= 10 A, dIE/dt= 800 A/us, T J= 125°C
IE= 10 A, dIE/dt= 100 A/us, T J= 25°C
IE= 10 A, dIE/dt= 800 A/us, T J= 125°C
IE= 10 A, dIE/dt= 100 A/us, T J= 25°C
IE= 10 A, dIE/dt= 800 A/us, T J= 125°C
MIN TYP.
1200
4.5 5.5
2.7
3.3
3.4
4.3
8.5 20
1650
250
110
75
65
3.6
420
45
2.4
95
90
10
420
45
4.2
160
20
75
2.4
2
60
800
22
MAX UNIT
V
6.5
±100
±200
250
1000
3.2
3.9
V
nA
µA
V
2200
380
160
110
100
560
60
S
pF
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
nC
3
TBD
TBD
TBD
V
V
ns
ns
nC
nC
A
A
Notes
(1) Pulse test, t 300 µs, duty cycle δ ≤ 2%
(2) switching times and losses may increase for larger V CE and/or RG values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.


Part Number MSAHZ52F120A
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Maker Microsemi Corporation
Total Page 2 Pages
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