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  Microsemi Electronic Components Datasheet  

JAN2N2432A Datasheet

NPN SILICON LOW POWER TRANSISTOR

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JAN2N2432A pdf
TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/313
Devices
2N2432
2N2432A
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temp. Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.0 mW/0C above TA > +250C
2) Derate linearly 4.0 mW/0C above TC > +250C
Symbol
VCEO
VCBO
VECO
IC
PT
Tstg
TJ
2N2432 2N2432A
30 45
30 45
15 18
100
300
600
-65 to +200
-65 to +175
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW
0C
0C
Symbol
RθJC
Max.
0.25
Unit
mW/ 0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Emitter-Collector Breakdown Voltage
IE = 100 µAdc, IB = 0
2N2432
2N2432A
V(BR)ECO
IE = 10 mAdc, IB = 0
Collector-Emitter Breakdown Current
Both
IC = 10 mAdc
2N2432
2N2432A
V(BR)CEO
Collector-Emitter Cutoff Current
VCB = 25 Vdc
VCB = 40 Vdc
2N2432
2N2432A
ICES
Min.
15
18
10
30
45
TO- 18*
(TO-206AA)
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
10 ηAdc
10
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2



  Microsemi Electronic Components Datasheet  

JAN2N2432A Datasheet

NPN SILICON LOW POWER TRANSISTOR

No Preview Available !

JAN2N2432A pdf
2N2432, 2N2432A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCB = 30 Vdc
2N2432
VCB = 25 Vdc
2N2432
VCB = 40 Vdc
2N2432A
VCB = 45 Vdc
Emitter-Collector Cutoff Current
2N2432A
VEC = 15 Vdc, VBC = 0 Vdc
Emitter-Base Cutoff Current
VEB = 15 Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 1.0 mAdc, VCE = 5.0 Vdc
Forward-Current Transfer Ratio (Inverted Connection)
IC = 0.2 mAdc, VCE = 5.0 Vdc
2N2432
2N2432A
Collector-Emitter Saturation Voltage
IC = 10 Vdc, IB = 0.5 mAdc
Emitter-Collector Offset Voltage
IE = 0 mAdc, IB = 200 µAdc
2N2432
2N2432A
IE = 0 mAdc, IB = 1.0 mAdc
2N2432
2N2432A
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 20 MHz
Output Capacitance
VCB = 0 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 0 Vdc, IC = 0, 100 kHz f 1.0 MHz
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
ICBO
IECS
IEBO
hFE
hFE(inv)
VCE(sat)
VEC(ofs)
hfe
Cobo
Cibo
Min. Max. Unit
100 µAdc
10 ηAdc
100 µAdc
10 ηAdc
2.0 ηAdc
2.0 ηAdc
30
80 400
2.0
3.0
0.15 mVdc
0.5
0.4 mVdc
0.1
0.7
2.0 10
12
12
pF
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2




Part Number JAN2N2432A
Description NPN SILICON LOW POWER TRANSISTOR
Maker Microsemi Corporation
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