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  Microsemi Electronic Components Datasheet  

2N3418 Datasheet

NPN MEDIUM POWER SILICON TRANSISTOR

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2N3418 pdf
2N3418 thru 2N3421
Available on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/393
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These
devices are also available in TO-39 and low profile U4 packaging. Microsemi also offers
numerous other transistor products to meet higher and lower power ratings with various
switching speed requirements in both through-hole and surface-mount packages.
Qualified Levels:
JAN, JANTX and
JANTXV
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N3418 through 2N3421 series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/393.
RoHS compliant versions available (commercial grade only).
VCE(sat) = 0.25 V @ IC = 1 A.
Rise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA.
Fall time tf = 0.20 µs max @ IC = 1.0 A, IB2 = -100 mA.
APPLICATIONS / BENEFITS
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
TO-5 Package
Also available in:
TO-39 package
(short leaded)
2N3418S – 2N3421S
U4 package
(surface mount)
2N3418U4 – 2N3421U4
MAXIMUM RATINGS
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
tp <= 1 ms, duty cycle <= 50%
Total Power Dissipation
@ TA = +25 °C (1)
@ TC = +100 °C (2)
Operating & Storage Junction Temperature Range
Symbol
V CEO
V CBO
V EBO
IC
PD
TJ, Tstg
Notes: 1. Derate linearly 5.72 mW/°C for TA > +25 °C.
2. Derate linearly 150 mW/°C for TC > +100 °C.
2N3418
2N3420
2N3419
2N3421
60 80
85 125
8
3
5
1
5
-65 to +200
Unit
V
V
V
A
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0192, Rev. 2 (111684)
©2011 Microsemi Corporation
Page 1 of 6


  Microsemi Electronic Components Datasheet  

2N3418 Datasheet

NPN MEDIUM POWER SILICON TRANSISTOR

No Preview Available !

2N3418 pdf
MECHANICAL and PACKAGING
CASE: Hermetically sealed, kovar base, nickel cap
MARKING: Part number, date code, manufacturer’s ID
POLARITY: See Package Dimensions on last page.
2N3418 thru 2N3421
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
PART NOMENCLATURE
JAN 2N3418 (e3)
Symbol
C obo
I CEO
I CEX
I EBO
h FE
V CEO
V CBO
V EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance.
Collector cutoff current, base open.
Collector cutoff current, circuit between base and emitter.
Emitter cutoff current, collector open.
Common-emitter static forward current transfer ratio.
Collector-emitter voltage, base open.
Collector-emitter voltage, emitter open.
Emitter-base voltage, collector open.
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
T4-LDS-0192, Rev. 2 (111684)
©2011 Microsemi Corporation
Page 2 of 6


Part Number 2N3418
Description NPN MEDIUM POWER SILICON TRANSISTOR
Maker Microsemi Corporation
Total Page 6 Pages
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