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  Microsemi Electronic Components Datasheet  

2N3250A Datasheet

(2N3250A / 2N3251A) PNP SILICON SWITCHING TRANSISTOR

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2N3250A pdf
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/323
Devices
2N3250A
2N3251A
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Ambient
1) Derate linearly 2.4 W/0C for TA > +250C
2) Derate linearly 8.0 W/0C for TC > +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
Symbol
RθJA(1)(2)
Value
60
60
5.0
200
0.36
1.2
-65 to +175
Units
Vdc
Vdc
Vdc
mAdc
W
W
0C
Max.
417
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Emitter Cutoff Voltage
V(BR)CEO
VBE = 3.0 Vdc, VCE = 40 Vdc
Collector-Base Cutoff Current
ICEX
VCB = 60 Vdc
ICBO
VCB = 40 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
Collector-Emitter Cutoff Voltage
VBE = 3.0 Vdc, VCE = 40 Vdc
IEBO
ICEX
Min.
60
TO-39*
(TO-205AD)
*See appendix A for
package outline
Max.
Unit
Vdc
20 ηAdc
10 µAdc
20 ηAdc
10 µAdc
50 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N3250A Datasheet

(2N3250A / 2N3251A) PNP SILICON SWITCHING TRANSISTOR

No Preview Available !

2N3250A pdf
2N3250A, 2N3251A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 1.0 Vdc
2N3250A
2N3251A
IC = 1.0 mAdc, VCE = 1.0 Vdc
2N3250A
2N3251A
IC = 10 mAdc, VCE = 1.0 Vdc
2N3250A
2N3251A
IC = 50 mAdc, VCE = 1.0 Vdc
2N3250A
2N3251A
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
2N3250A
2N3251A
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz
2N3250A
2N3251A
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 1.0 Vdc, IC = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 3.0 Vdc; IC = 10 mAdc; IB1= 1.0 mAdc
Turn-Off Time
VCC = 3.0 Vdc; IC = 10 mAdc; IB1 = IB2 = 1.0 mAdc
2N3250A
2N3251A
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
hfe
Cobo
Cibo
ton
toff
Min. Max. Unit
40
80
45
90
50 150
100 300
15
30
0.25
0.50
0.60 0.90
1.20
Vdc
Vdc
50 200
100 400
2.5 9.0
3.0 9.0
6.0
8.0
70
pF
pF
ηs
250 ηs
300
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N3250A
Description (2N3250A / 2N3251A) PNP SILICON SWITCHING TRANSISTOR
Maker Microsemi Corporation
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