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  Microsemi Electronic Components Datasheet  

2N2907ADIE Datasheet

SWITCHING TRANSISTOR PNP SILICON

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2N2907ADIE pdf
A Microsemi Company
580 Pleasant St.
Watertown, MA 02172
2N2907ADIE
Phone: 617-924-9280
Fax: 617-924-1235
DIE SPECIFICATION
SWITCHING TRANSISTOR
PNP SILICON
FEATURES:
n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291
n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
n LOW VCE(sat): .4V @ IC = 150 mAdc
PHYSICAL DIMENSIONS
Absolute Maximum Ratings:
Symbol Parameter
Vceo
Vcbo
Vebo
Ic
Tj, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current- Continuous
Operating Junction & Storage
Temperature Range
Limit Unit
60 Vdc
60 Vdc
5.0 Vdc
600 mAdc
-65 to +200 °C
Packaging Options:
W: Wafer (100% probed) U: Wafer (sample probed)
D: Chip (Waffle Pack)
B: Chip (Vial)
V: Chip (Waffle Pack, 100% visually inspected) X: Other
Processing Options:
Standard: Capable of JANTXV applications (No Suffix)
Suffix C: Commercial
Suffix S: Capable of S-Level equivalent applications
Metallization Options:
Standard: Al Top
Dash 1: Al Top
/ Au Backside (No Dash #)
/ TiPdAg Backside
ORDERING INFORMATION:
PART #: 2N2907A_ _ - _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #: Metallization Option
Sertech reserves the right to make changes to any product design, specification, or other information at any time without
prior notice.
Data Sheet, Die, 2N2907A MSW Rev. - 4/14/98
MSC0948.PDF
1


  Microsemi Electronic Components Datasheet  

2N2907ADIE Datasheet

SWITCHING TRANSISTOR PNP SILICON

No Preview Available !

2N2907ADIE pdf
Electrical Characteristics @ Tj = 25 °C
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICES
ICBO1
IEBO
Breakdown Voltage, Collector to Base
Breakdown Voltage, Emitter to Base
Breakdown Voltage, Collector to Emitter
Collector to Emitter Cutoff Current
Collector to Base Cutoff Current
Emitter to Base Cutoff Current
Bias Cond. D, IC=10uAdc
Bias Cond. D, IE=10uAdc
Bias Cond. D, IC= 10mAdc, pulsed
Bias Cond. D, VCE=50Vdc
Bias Cond. D, VCB=50Vdc
Bias Cond. D, VEB= 4Vdc
Min Max Unit
60 Vdc
5 Vdc
60 Vdc
50 nAdc
10 nAdc
50 nAdc
ON CHARACTERISTICS
hFE1
hFE2
hFE3
hFE4
hFE5
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
VCE=10Vdc, IC=0.1mAdc
VCE=10Vdc, IC=1.0mAdc
VCE=10Vdc, IC=10mAdc
VCE=10Vdc, IC=150mAdc, pulsed
VCE=10Vdc, IC=500mAdc, pulsed
IC=150mAdc, IB=15mAdc, pulsed
IC=500mAdc, IB=50mAdc, pulsed
IC=150mAdc, IB=15mAdc, pulsed
IC=500mAdc, IB=50mAdc, pulsed
75
100 450
100
100 300
50
0.4 Vdc
1.6 Vdc
0.6 1.3 Vdc
2.6 Vdc
SMALL SIGNAL CHARACTERISTICS
hfe
/hfe/
Cobo
Cibo
Short Circuit Forward Current Xfer Ratio
Magnitude of Short Circuit Forward
Current Transfer Ratio
Output Capacitance
Input Capacitance
VCE= 10Vdc,IC =1mAdc, f= 1kHz
100
VCE= 20Vdc,IC =50mAdc, f=100MHz 2
VCB= 10Vdc, IE =0, 100kHz< f <1MHz
VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz
8 pF
30 pF
SWITCHING CHARACTERISTICS
ton Saturated Turn-on Time
toff Saturated Turn-off Time
As defined in 19500/291 Figure 7
As defined in 19500/291 Figure 8
45 nS
300 nS
2


Part Number 2N2907ADIE
Description SWITCHING TRANSISTOR PNP SILICON
Maker Microsemi Corporation
Total Page 2 Pages
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