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  Microsemi Electronic Components Datasheet  

2N2907A Datasheet

PNP BIPOLAR TRANSISTOR

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2N2907A pdf
Features
Meets MIL-S-19500/291
Collector-Base Voltage 60V
Collector Current: 600 mAdc
Fast Switching 345 nS
580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
Maximum Ratings
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current--Continuous
Total Device Dissipation
@ TA = 25oC
Derate above 25oC
Total Device Dissipation
@ TC = 25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating Temperature Range
Storage Temperature Range
Mechanical Outline
2N2907A
60 Volts
0.6 Amps
PNP
BIPOLAR
TRANSISTOR
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
RθJA
RθJC
TJ
TS
MAX.
UNIT
-60
-60
-5.0
-600
Vdc
Vdc
Vdc
mAdc
400 mW
2.28
mW/oC
1.8
10.3
438
97
-65 to+200
-65 to+200
Watts
mW/oC
oC/W
oC/W
oC
oC
Datasheet# MSC0276A 5/19/97


  Microsemi Electronic Components Datasheet  

2N2907A Datasheet

PNP BIPOLAR TRANSISTOR

No Preview Available !

2N2907A pdf
2N2907A
Electrical Parameters (TA @ 25°C unless otherwise specified)
CHARACTERISTICS
Off Characteristics
Collector-Emitter Breakdown Voltage(1)
(IC = -10 mAdc, IB = 0)
Collector Base Breakdown Voltage (I C = -10 µAdc, IE = 0)
Emitter-Base Breakdown Voltage (I E = -10 µAdc, IC = 0)
Collector Cutoff Current (V CE = -50 Vdc)
Collector Cutoff Current
(VCB = -50 Vdc, IE = 0)
(VCB = -50 Vdc, IE = 0, TA = 150oC)
Emitter Cutoff Current ( V EB = -4 Vdc)
D.C. Current Gain
(IC = -0.1 mAdc, VCE = -10Vdc)
(IC = -1.0 mAdc, VCE = -10Vdc)
(IC = -10 mAdc, VCE = -10Vdc)
(IC = -150 mAdc, VCE = -10Vdc)(1)
(IC = -500 mAdc, VCE = -10Vdc)(1)
(IC = -10mAdc,VCE = -10Vdc) TA = -55oC
Collector-Emitter Saturation Voltage(1)
(IC = -150 mAdc, IB = -15 mAdc)
(IC = -500 mAdc, IB = -50 mAdc)
Base-Emitter Saturation Voltage
(IC = -150 mAdc, IB = -15 mAdc)
(IC = -500 mAdc, IB = -50 mAdc)
Magnitude of small-signal short cicuit forward current transfer ratio
(IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = -10 Vdc, IE = 0, 100kHz < f < 1MHz
Input Capacitance
(VEB = -2.0 Vdc, IC = 0, 100kHz < f < 1MHz
Switching Speeds
Turn-on Time
IB1 = -15 mAdc)
(V CC = -30 Vdc, IC = -150 mAdc,
SYMBOL
BVCEO
BVCBO
BVEBO
ICES
ICBO
MIN.
-60
-60
-5.0
--
--
IEBO
hFE
VCE(Sat)
VBE(Sat)
/hfe/
COBO
CIBO
tON
--
75
100
100
100
50
50
--
--
-0.6
--
2
--
--
--
Turn-off Time
(V CC = -6.0 Vdc, IC = -150 mAdc,
IB1 = IB2 = -15 mAdc)
(1) Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
toff --
TYP. MAX. UNIT
Vdc
-- --
-- -- Vdc
-- -- Vdc
-- -50 nAdc
-- µAdc
-0.01
-10
-- -50 nAdc
--
-- --
-- 450
-- --
-- 300
-- --
Vdc
-- -0.4
-- -1.6
Vdc
-- -1.3
-- -2.6
-- --
pF
-- 8.0
30 pF
--
ns
45
300 ns
Datasheet# MSC0276A 5/19/97


Part Number 2N2907A
Description PNP BIPOLAR TRANSISTOR
Maker Microsemi Corporation
Total Page 2 Pages
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