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  Microsemi Electronic Components Datasheet  

2N2905A Datasheet

PNP SWITCHING SILICON TRANSISTOR

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2N2905A pdf
Features
Meets MIL-S-19500/290
Collector-Base Voltage 60V
Collector Current: 600 mA
Fast Switching 345 nS
580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-040
FAX: (617) 924-1235
Maximum Ratings
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current--Continuous
Total Device Dissipation
@ TA = 25oC
Derate above 25oC
Total Device Dissipation
@ TC = 25oC
Derate above 25oC
Operating Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Mechanical Outline
2N2905A
60 Volts
600 mAmps
PNP
BIPOLAR
TRANSISTOR
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
TJ
TS
RθJA
RθJC
MAX.
UNIT
-60 Vdc
-60 Vdc
-5.0 Vdc
-600 mAdc
600
3.43
mW
mW/oC
3.0
17.2
-65 to + 200
-65 to + 200
292
58
W
mW/oC
oC
oC
oC/W
oC/W
Datasheet# MSC0278A 5/19/97


  Microsemi Electronic Components Datasheet  

2N2905A Datasheet

PNP SWITCHING SILICON TRANSISTOR

No Preview Available !

2N2905A pdf
2N2905A
Electrical Parameters (TA @ 25°C unless otherwise specified)
CHARACTERISTICS
Off Characteristics
Collector-Emitter Breakdown Voltage(1)
(IC = -10 mAdc, IB = 0)
Collector-Base Breakdown Voltage (I C = -10 µAdc, IC = 0)
Emitter-Base Breakdown Voltage (I E = -10 uAdc, IC = 0)
Collector to Emitter Cutoff Current (VCE = -30 Vdc, VEB = -0.5 Vdc)
Collector-Base Cutoff Current
(VCB = -50 Vdc, IE = 0)
(VCB = -50 Vdc, IE = 0, TA = 150oC)
Emitter to Base Cutoff Current (V EB = -3.5 Vdc)
D.C. Current Gain
(IC = -0.1 mAdc, VCE = -10 Vdc)
(IC = -1.0 mAdc, VCE = -10 Vdc)
(IC = -1.0 mAdc, VCE = - 10Vdc) @ -55C
(IC = -10 mAdc, VCE = -10 Vdc)
(IC = -150 mAdc, VCE = -10 Vdc)(1)
(IC = -500 mAdc, VCE = -10 Vdc)(1)
Collector-Emitter Saturation Voltage
(IC = -150 mAdc, IB = -15 Vdc)
(IC = -500 mAdc, IB = -50 Vdc)
Base-Emitter Saturation Voltage
(IC = -150 mAdc, IB = -15 Vdc)(1)
(IC = -500 mAdc, IB = -50 Vdc)(1)
Small- signal short-circuit forward current transfer ratio
(IC = 1mAdc, VCE = 10V, f = 1 kHz)
(IC = -50 mAdc, VCE = -20 Vdc, f = 100MHz)
Output Capacitance
(VCB = -10 Vdc, IE = 0, 100kHz < f < 1MHz )
Input Capacitance
(VEB = -2.0 Vdc, IC = 0, 100kHz < f < 1MHz)
Switching Speeds, Turn-on Time
Turn-on Time
(VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15mAdc)
SYMBOL
BVCEO
BVCBO
BVEBO
ICES
ICBO
IEBO
hFE
VCE(Sat)
VBE(Sat)
hfe
COB
CIB
tON
MIN.
-60
-60
-5.0
--
--
--
--
75
100
50
100
100
50
--
--
--
--
100
--
--
--
--
Turn-off Time
(VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc)
toff --
TYP. MAX. UNIT
Vdc
-- --
-- -- Vdc
-- -- Vdc
-- -1 uAdc
µAdc
-- -0.01
-- -10
-- -50 nAdc
--
-- --
-- 450
-- --
-- --
-- 300
Vdc
-- -0.4
-- -1.6
Vdc
-- -1.3
-- -2.6
-- --
-- 2
-- 8.0
pf
-- 30
pf
ns
-- 45
ns
-- 300
(1) Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Datasheet# MSC0278A 5/19/97


Part Number 2N2905A
Description PNP SWITCHING SILICON TRANSISTOR
Maker Microsemi Corporation
Total Page 2 Pages
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