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  Microsemi Electronic Components Datasheet  

2N1613 Datasheet

NPN LOW POWER SILICON TRANSISTOR

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2N1613 pdf
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
Devices
2N718A
2N1613
2N1613L
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
2N718A
2N1613, L
2N718A
2N1613, L
VCEO
VCBO
VEBO
IC
PT
30 Vdc
75 Vdc
7.0 Vdc TO-18 (TO-206AA)*
500 mAdc 2N718A
0.5
0.8 W
1.8
3.0
Operating & Storage Junction Temperature Range
TJ, Tstg
-55 to +175 0C
TO-39 (TO-205AD)*
THERMAL CHARACTERISTICS
2N1613
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
2N718A
RθJC
97 0C/W
2N1613, L
58
1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C
2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C
TO-5*
2N1613L
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
*See appendix A for package
outline
Min. Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
Collector-Emitter Breakdown Voltage
V(BR)CEO
30
Vdc
IC = 10 mAdc, RBE = 10
Collector-Base Cutoff Current
V(BR)CER
50
Vdc
VCB= 60 Vdc
Emitter-Base Cutoff Current
ICBO 10 ηAdc
VEB = 5.0 Vdc
IEBO 10 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N1613 Datasheet

NPN LOW POWER SILICON TRANSISTOR

No Preview Available !

2N1613 pdf
2N718A, 2N1613, 2N1613L JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
Small-Signal Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Small-Signal Short Circuit Input Impedance
IC = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz
Small-Signal Short Circuit Output Admittance
IC = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See Figure 1 of MIL-PRF-19500/181)
(3)Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
hfe
hib
hob
Cobo
ton + toff
Min. Max. Unit
20
35
40 120
20
Vdc
1.5
Vdc
1.3
3.0
30 100
35 150
4.0 8.0
1.0
25
30
ηΩ
pF
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N1613
Description NPN LOW POWER SILICON TRANSISTOR
Maker Microsemi Corporation
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