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  Microsemi Electronic Components Datasheet  

2N1480 Datasheet

(2N1479 - 2N1482) NPN SILICON MEDIUM POWER TRANSISTOR

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2N1480 pdf
TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/207
Devices
Qualified Level
2N1479
2N1480
2N1481
2N1482
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base-Current
Total Power Dissipation @ TA = 250C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
VCEO
VCBO
VEBO
IC
IB
PT
TJ, Tstg
Symbol
RθJC
2N1479
2N1481
40
2N1480
2N1482
55
60 100
12
1.5
1.0
1.0
-65 to +200
Max.
35
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
2N1479, 2N1481
2N1480, 2N1482
V(BR)CEO
Collector-Emitter Breakdown Voltage
VEB = 1.5 Vdc, IC = 0.25 mAdc
VEB = 1.5 Vdc, IC = 0.25 mAdc
2N1479, 2N1481
2N1480, 2N1482
V(BR)CEX
Collector-Base Cutoff Current
VCB = 30 Vdc
2N1479, 2N1481
ICBO
VCB = 50 Vdc
2N1480, 2N1482
Emitter-Base Cutoff Current
VEB = 12 Vdc
IEBO
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
0C
Unit
0C/W
Min.
40
55
60
100
TO-5*
*See Appendix A for
Package Outline
Max.
Unit
Vdc
Vdc
5.0 µAdc
5.0
10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2



  Microsemi Electronic Components Datasheet  

2N1480 Datasheet

(2N1479 - 2N1482) NPN SILICON MEDIUM POWER TRANSISTOR

No Preview Available !

2N1480 pdf
2N1479, 2N1480, 2N1481, 2N1482 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 200 mAdc, VCE = 4.0 Vdc
2N1479, 2N1480
2N1481, 2N1482
Collector-Emitter Saturation Voltage
IC = 200 mAdc, IB = 20 mAdc
2N1479, 2N1480
IC = 200 mAdc, IB = 10 mAdc
Base-Emitter Voltage
2N1481, 2N1482
IC = 200 mAdc, VCE = 4.0 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Cutoff Frequency
IC = 5.0 mAdc, VCB = 28 Vdc
SWITCHING CHARACTERISTICS
Total Switching Time
VCC = 12 Vdc; RC = 59 ; IB0 = IB2 = 8.5 mAdc; IB1= 20 mAdc
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE
fab
ton + toff
Min.
20
35
800
Max.
60
100
0.75
0.75
1.5
25
Unit
Vdc
Vdc
kHz
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2




Part Number 2N1480
Description (2N1479 - 2N1482) NPN SILICON MEDIUM POWER TRANSISTOR
Maker Microsemi Corporation
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