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  Microsemi Electronic Components Datasheet  

2731-100M Datasheet

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2731-100M pdf
2731-100MR3
2731-100M
100 Watts, 36 Volts, 200µs, 10%
Radar 2700-3100 MHz
GENERAL DESCRIPTION
The 2731-100M is an internally matched, COMMON BASE bipolar transistor
capable of providing 100 Watts of pulsed RF output power at 200µs pulse
width, 10% duty factor across the 2700 to 3100 MHz band. The transistor
prematch and test fixture has been optimized through the use of 10 Ohm TRL
Analysis. This ceramic sealed transistor is specifically designed for S-band
radar applications. It utilizes gold metallization and emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
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ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C1
575 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
Emitter to Base Voltage (BVebo)
Collector Current (Ic)
65 V
3.0 V
15.0 A
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
Pout
Pg
ηc
Rl
Pd
VSWR-T
Power Output
Power Gain
Collector Efficiency
Return Loss
Pulse Droop
Load Mismatch Tolerance
TEST CONDITIONS
F=2700-3100 MHz
Pulse Width = 200 µs
Duty Factor = 10 %
Power Input = 16W
Vcc = +36V
F = 2700, 2900, 3100 MHz
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
BVces
hFE
θjc1
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 30 mA
Ic = 120 mA
Vce = 5V, Ic = 600 mA
MIN
100
8.0
40
-7
TYP
115
8.5
MAX
140
9.4
0.6
2:1
UNITS
W
dB
%
dB
dB
3.0 V
65 V
15
0.43 °C/W
Issue March 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.



  Microsemi Electronic Components Datasheet  

2731-100M Datasheet

Radar

No Preview Available !

2731-100M pdf
2731-100MR3
2731-100M
Vcc = 36 Volts, Pulse Width = 200µs, Duty = 10 %
Pin vs. Pout
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
0.0
5.0 10.0 15.0
Pin (Watts)
20.0
25.0
2.7GHz
2.8GHz
2.9GHz
3.0GHz
3.1GHz
Efficiency vs. Frequency
55
50
45
40
35
30
2.65 2.7 2.75 2.8 2.85 2.9 2.95 3 3.05 3.1 3.15
Frequency (GHz)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.



  Microsemi Electronic Components Datasheet  

2731-100M Datasheet

Radar

No Preview Available !

2731-100M pdf
Gain vs. Frequency
9
8
7
6
5
4
3
2
1
0
2.6 2.7 2.8 2.9
3
Frequency (GHz)
2731-100MR3
3.1 3.2
Impedance curves will be added at the completion of the characterization.
Impedance
Data
Freq (GHz)
Zs
2.7 8.87-j12.64
2.8 8.24-j10.26
2.9 8.54-j8.06
3.0 9.85-j6.05
3.1 10.26-j4.88
Zl
4.33-j4.67
3.95-j4.94
3.47-j5.08
2.96-j5.06
2.48-j4.92
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.




Part Number 2731-100M
Description Radar
Maker Microsemi Corporation
Total Page 5 Pages
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