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  Microsemi Electronic Components Datasheet  

2N3019 Datasheet

LOW POWER NPN SILICON TRANSISTOR

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2N3019 pdf
TECHNICAL DATA
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
Devices
2N3019
2N3019S
2N3057A
2N3700
2N3700S
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
@ TC = +250C(2)
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
Operating & Storage Jct Temp Range
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
Value
80
140
7.0
1.0
0.8
0.4
0.5
0.4
5.0
1.8
1.8
1.16
-55 to +175
Units
Vdc
Vdc
Vdc
Adc
W
W
0C
TO-39* (TO-205AD)
2N3019, 2N3019S
TO- 18* (TO-206AA)
2N3700
TO-46* (TO-206AB)
2N3057A
1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A;
2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA +250C.
2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S;
10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC +250C.
3 PIN SURFACE MOUNT*
2N3700UB
*See appendix A for package
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
outline
Characteristics
Symbol
Min. Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 µAdc
V(BR)CBO
140
Vdc
Emitter-Base Breakdown Voltage
IE = 100 µAdc
V(BR)EBO
7.0
Vdc
Collector-Emitter Breakdown Current
IC = 30 mAdc
V(BR)CEO
80
Vdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N3019 Datasheet

LOW POWER NPN SILICON TRANSISTOR

No Preview Available !

2N3019 pdf
2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCE = 90 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
IC = 1.0 Adc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 10 ms
Test 1
2N3019, 2N3019S
2N3057A, 2N3700, 2N3700UB
VCE = 10 Vdc
IC = 500 mAdc
IC = 180 mAdc
Test 2
2N3019, 2N3019S
2N3057A, 2N3700, 2N3700UB
VCE = 40 Vdc
IC = 125 mAdc
IC = 45 mAdc
Test 3
VCE = 80 Vdc
2N3019, 2N3019S
IC = 60 mAdc
2N3057A, 2N3700, 2N3700UB
IC = 22.5 mAdc
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
ICES
IEBO
Min. Max. Unit
10 ηAdc
10 ηAdc
hFE
VCE(sat)
VBE(sat)
hfe
hfe
Cobo
Cibo
100 300
50 200
90
50 200
15
0.2
0.5
1.1
Vdc
Vdc
80 400
5.0 20
12
60
pƒ
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N3019
Description LOW POWER NPN SILICON TRANSISTOR
Maker Microsemi
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