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  Microsemi Electronic Components Datasheet  

2N2605UB Datasheet

PNP SILICON LOW POWER TRANSISTOR

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2N2605UB pdf
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
DEVICES
2N2604
2N2605
2N2604UB
2N2605UB
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C (1)
Operating & Storage Junction Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PT
TJ, Tstg
2N2604 2N2605
80 70
60
6.0
30
400
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW/°C
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
Note:
1/ Consult 19500/354 for thermal curves
Symbol
UB RθJA
Max.
437
275
Unit
°C/mW
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Base Cutoff Current
VCB = 80V dc
VCB = 70V dc
VCB = 50V dc
VCB = 50V dc, TA = +150°C
2N2604, UB
2N2605, UB
2N2604, 2N2605, UB
2N2604, 2N2605, UB
Symbol
ICBO
Min.
10.0
10.0
10.0
5.0
Max.
Unit
uAdc
nAdc
uAdc
uAdc
Collector-Emitter Breakdown Current
IC = 10mAdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
VEB = 5.0Vdc
Collector-Emitter Cutoff Current
VCE = 50Vdc
V(BR)CEO
60
IEBO
ICES
Vdc
10.0 uAdc
2.0 ηAdc
10 ηAdc
TO-46 (TO-206AB)
UB Package
T4-LDS-0092 Rev. 2 (101320)
Page 1 of 4


  Microsemi Electronic Components Datasheet  

2N2605UB Datasheet

PNP SILICON LOW POWER TRANSISTOR

No Preview Available !

2N2605UB pdf
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERTICS (2)
Forward-Current Transfer Ratio
IC = 10μAdc, VCE = 5.0Vdc
IC = 500μAdc, VCE = 5.0Vdc
IC = 10mAdc, VCE = 5.0Vdc
IC = 10mAdc, VCE = 5.0Vdc, TA = -55°C
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 500μAdc
2N2604, UB
2N2605, UB
2N2604, UB
2N2605, UB
2N2604, UB
2N2605, UB
2N2604, UB
2N2605, UB
Symbol
hFE
VCE(sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 500μAdc
VBE(sat)
Min.
40
100
60
150
40
100
15
30
0.7
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Input Impedance
IC = 1.0mAdc, VCB = 5.0Vdc, f = 1.0kHz
2N2604, UB
2N2605, UB
Small-Signal Open-Circuit Forward Current Output Admittance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
2N2604, UB
2N2605, UB
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
2N2604, UB
2N2605, UB
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 0.5mAdc, VCE = 5.0Vdc, f = 30MHz
Output Capacitance
VCB = 5.0Vdc, IE = 0, 100 kHz f 1.0MHz
Noise Figure
VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 100Hz
VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 1.0kHz
VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 10kHz
Symbol
hie
hoe
hfe
|hfe|
Cobo
F1
F2
F3
Min.
1.0
2.0
60
150
1.0
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%
Max.
120
300
180
450
160
400
Unit
0.3 Vdc
0.9 Vdc
Max.
10
20
40
60
180
450
8.0
6.0
Unit
kΩ
μmhos
pF
5.0
3.0 dB
3.0
T4-LDS-0092 Rev. 2 (101320)
Page 2 of 4


Part Number 2N2605UB
Description PNP SILICON LOW POWER TRANSISTOR
Maker Microsemi
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