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  Microsemi Electronic Components Datasheet  

2N2484 Datasheet

SMALL SIGNAL BIPOLAR NPN SILICON

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2N2484 pdf
TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
Devices
2N2484
Qualified Level
JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.06 mW/0C above TA = +250C
2) Derate linearly 6.85 mW/0C above TC = +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
2N2484
60
60
6.0
50
360
1.2
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
W
0C
Symbol
RθJC
Max.
146
Unit
0C/W
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
Collector-Emitter Cutoff Current
VCE = 45 Vdc
Collector-Base Cutoff Current
V(BR)CEO
ICES
VCB = 45 Vdc
VCB = 60 Vdc
Collector-Emitter Cutoff Current
VCE = 5.0 Vdc
Emitter-Base Cutoff Current
ICBO
ICEO
VEB = 5.0 Vdc
VEB = 6.0 Vdc
IEBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Min. Max.
Unit
60 Vdc
5.0 ηAdc
5.0 ηAdc
10 µAdc
2.0 ηAdc
2.0 ηAdc
10 µAdc
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N2484 Datasheet

SMALL SIGNAL BIPOLAR NPN SILICON

No Preview Available !

2N2484 pdf
2N2484 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 µAdc, VCE = 5.0 Vdc
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 100 µAdc, VCE = 5.0 Vdc
IC = 500 µAdc, VCE = 5.0 Vdc
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 1.0 mAdc, IB = 100 µAdc
Base-Emitter Voltage
VCE = 5.0 Vdc, IC = 100 µAdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 50 µAdc, VCE = 5.0 Vdc, f = 5.0 MHz
IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz
Open Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Open Circuit Reverse-Voltage Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Input Impedance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE
hfe
hoe
hre
hie
hfe
Cobo
Cibo
Min. Max. Unit
45
200 500
225 675
250 800
250 800
225 800
0.3
0.5 0.7
Vdc
Vdc
3.0
2.0 7.0
40 µmhos
8.0x10-4
3.5 24
k
250 900
5.0 pF
6.0 pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N2484
Description SMALL SIGNAL BIPOLAR NPN SILICON
Maker Microsemi
Total Page 2 Pages
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