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  Microsemi Electronic Components Datasheet  

2N2324 Datasheet

SILICON CONTROLLED RECTIFIER

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2N2324 pdf
TECHNICAL DATA
SILICON CONTROLLED RECTIFIER
Qualified per MIL-PRF-19500/276
Devices
2N2323
2N2323S
2N2323A
2N2323AS
2N2324
2N2324S
2N2324A
2N2324AS
2N2326
2N2326S
2N2326A
2N2326AS
2N2328
2N2328S
2N2328A
2N2328AS
2N2329
2N2329S
Qualified
Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Sym
2N2323,S/ 2N2324,S/ 2N2326,S/ 2N2328,S/
2N2323A,S 2N2324A,S 2N2326A,S 2N2328A,S
2N2329,S
Unit
Reverse Voltage
VRM
50
100 200 300 400 Vdc
Working Peak Reverse Voltage VRM
Forward Blocking Voltage VFBXM
Average Forward Current (1)
IO
Forward Current Surge Peak(2) IFSM
75
50(3/4)
150
100(3/4)
300
200(3/4)
0.22
15
400
300(3/4)
500
400(3)
Vpk
Vpk
Adc
Adc
Cathode-Gate Current
VKGM
6
Vpk
Operating Temperature
Top
-65 to +125
0C
Storage Junction Temp
Tstg
-65 to +150
0C
1) This average forward current is for an ambient temperature of 800C and 180 electrical degrees of
conduction.
2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during
the first 5 µs after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured
TO-5
from the point where the thyristor voltage has decayed to 90% of its initial blocking value.
3) Gate connected to cathode through 1,000 ohm resistor.
4) Gate connected to cathode through 2,000 ohm resistor.
*See appendix A
for package outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min. Max. Unit
SUBGROUP 2 TESTING
Reverse Blocking Current
R2 = 1 kµ
2N2323 thru 2N2329
2N2323S thru 2N2329S
R2 = 2 kµ
VR = 50 Vdc
VR = 100 Vdc
VR = 200 Vdc
VR = 300 Vdc
VR = 400 Vdc
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S,
IRBX1
10 µAdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N2324 Datasheet

SILICON CONTROLLED RECTIFIER

No Preview Available !

2N2324 pdf
2N2323, A, AS, S; 2N2324, A, AS, S; 2N2326, A, AS, S; 2N2328, A, AS, S; 2N232, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min. Max. Unit
Forward Blocking Current
R2 = 1 k
2N2323 thru 2N2329
2N2323S thru 2N2329S
R2 = 2 k
VR = 50 Vdc
VR = 100 Vdc
VR = 200 Vdc
VR = 300 Vdc
VR = 400 Vdc
Reverse Gate Current
VKG = 6 Vdc
Gate Trigger Voltage and Current
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S
IFBX1
IKG
10 µAdc
200 µAdc
V2 = VFBX = 6 Vdc; RL = 100
Re = 1 k
Re = 2 k
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
VGT1
IGT1
VGT1
IGT1
0.35 0.80 Vdc
200 µAdc
0.35 0.60 Vdc
20 µAdc
SUBGROUP 4 TESTING
Exponential Rate of Voltage Rise TA = 1250C
50 Ω ≤ RL 400 , C = 0.1 to 1.0 µF, repetition rate = 60 pps,
test duration = 15 seconds
dv/dt = 1.8 v/µs, R3 = 1 k
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
dv/dt = 0.7 v/µs, R3 = 2 k
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
VFBX
Vdc
VAA = 50 Vdc
VAA = 100 Vdc
VAA = 200 Vdc
VAA = 300 Vdc
VAA = 400 Vdc
Forward “on” Voltage
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S
iFM = 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max
Holding Current
VAA = 24 Vdc max, IF1 = 100 mAdc, IF2 = 10 mAdc
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25 µs min., R2 = 330
R3 = 1 k
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
R3 = 2 k
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
VFM
IHOX
47
95
190
285
380
2.2 V(pk)
2.0 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N2324
Description SILICON CONTROLLED RECTIFIER
Maker Microsemi
Total Page 2 Pages
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