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  Microsemi Electronic Components Datasheet  

2N2151 Datasheet

5 Amp / 100V / Planar / NPN Power Transistors JAN / JANTX

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2N2151 pdf
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
APPLICATIONS:
Fast Switching
High Frequency Switching and Amplifying
FEATURES:
High Reliability
Greater Gain Stability
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
CHARACTERISTIC
VCBO*
VCEO*
VEBO*
IC*
IC*
IB*
TSTG*
TJ*
*
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Collector Current
Continuous Collector Current
Continuous Base Current
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16"
From Case for 10 Sec.
Power Dissipation
PT* TA = 25°C
TC = 100°C
θ JC
Thermal Resistance
Junction to Case
* Indicates JEDEC registered data.
MSC0942A.DOC 11-03-98
2N2151
5 Amp, 100V,
Planar, NPN
Power Transistors
JAN, JANTX
TO-59
VALUE
150
100
8
10
5
2
-65 to 200
-65 to 200
230
2
30
3.33
UNITS
V
V
V
A
A
A
°C
°C
°C
W
W
°C/W


  Microsemi Electronic Components Datasheet  

2N2151 Datasheet

5 Amp / 100V / Planar / NPN Power Transistors JAN / JANTX

No Preview Available !

2N2151 pdf
2N2151
ELECTRICAL CHARACTERISTICS
(25°Case Temperature Unless Otherwise Noted)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
BVCBO*
BVCEO*
Collector-Base Voltage
Collector-Emitter
Voltage (Note 1)
IC = 100 µAdc, Cond. D
IC = 50 mAdc, Cond. D
BVEBO*
ICEO*
ICEX*
ICBO*
hFE*
Emitter-Base Voltage
Collector-Emitter
Cutoff Current
Collector-Emitter
Cutoff Current
Collector-Base
Cutoff Current
DC Current Gain
(Note 1)
hFE*
VCE(sat)*
VBE(sat)*
VBE(on)*
fT*
Cob*
AC Current Gain
Collector Saturation
Voltage (Note 1)
Base Saturation
Voltage (Note 1)
Base On-Voltage
(Note 1)
Gain-Bandwidth
Product
Output Capacitance
IE = 2 µAdc, Cond. D
VCE = 120 Vdc Cond. D
VCE = 120 Vdc, VEB = 0.5 Vdc, Cond. A
VCE = 120 Vdc, VEB = 0.5 Vdc, Cond. A TA = 150°C
VCB = 120 Vdc, Cond. D
IC = 1 Adc, VCE = 5 Vdc
IC = 0.5 Adc, VCE = 5 Vdc
IC = 0.1 Adc, VCE = 5 Vdc
IC = 0.1 Adc, VCE = 30 Vdc, f = 1 KHz
IC = 1 Adc, IB = 0.1 Adc
IC = 1 Adc, IB = 0.1 Adc
IC = 1 Adc, VCE = 2 Vdc
IC = 1 Adc, VCE = 30 Vdc, f = 10 MHz
VCB = 20 Vdc, 1E = 0, f = 1 MHz
Note 1: Pulse Test: PW = 300µs, Duty Cycle 2%.
* Indicates JEDEC registered data.
VALUE
Min. Max
150 ----
100 ----
Units
Vdc
Vdc
8 ---- Vdc
---- 5 µAdc
---- 5 µAdc
---- 100 µA
---- 5 µAdc
40 120 ----
40 120 ----
40 ---- ----
40 160 ----
---- 1.0 Vdc
---- 1.2 Vdc
---- 1.2 Vdc
10 70 MHz
---- 160 pf
MSC0942A.DOC 11-03-98


Part Number 2N2151
Description 5 Amp / 100V / Planar / NPN Power Transistors JAN / JANTX
Maker Microsemi
Total Page 3 Pages
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