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61048-001 Datasheet Preview

61048-001 Datasheet

SILICON PHOTOTRANSISTOR

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61048-001 pdf
61048
SILICON PHOTOTRANSISTOR
(TYPE GS4123)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Hermetically sealed
High Sensitivity
Base lead provided for conventional transistor
biasing
Wide receiving angle for easy alignment
Spectrally Matched to the 62030 Series LED.
Applications:
Incremental Encoding
Reflective Sensors
Position Sensors
Level Sensors
DESCRIPTION
This is a N-P-N Planar Silicon phototransistor in a flat window TO-46 three-lead package featuring a large (0.06” X 0.06”)
sensitive area. It is available in a range of sensitivities and is ideal for use wherever system considerations dictate the use
of external optics to focus radiation on the sensor. Available custom binned to customer specifications and/or screened to
MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Temperature (See part selection guide for actual operating temperature)...................................... -65°C to +125°C
Collector-Emitter Voltage........................................................................................................................................................ 50V
Emitter-Collector Voltage.......................................................................................................................................................... 7V
Continuous Collector Current ..............................................................................................................................................50mA
Power Dissipation (Derate at the rate of 2.5 mW/°C above 25°C) ..................................................................................250mW
Lead Soldering Temperature (1/16” from case for 10 seconds)........................................................................................ 240°C
Package Dimensions
Schematic Diagram
0.210 [5.33]
0.170 [4.32]
0.230Ø [5.84]
0.209Ø [5.31]
0.195Ø [4.95]
0.178Ø [4.52]
0.030 [0.76] MAX
0.019 Ø[0.48]
0.016 Ø[0.41]
0.500 [12.70]
MIN
3 LEADS
3
COLLECTOR
Ø0.100 [Ø2.54]
2
BASE
EMITTER
1
45°
0.048 [1.22]
0.028 [0.71]
0.046 [1.17]
0.036 [0.91]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
THE COLLECTOR IS IN ELECTRICAL
CONTACT WITH THE CASE
C
E
B
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
6-4



Micropac Industries
Micropac Industries

61048-001 Datasheet Preview

61048-001 Datasheet

SILICON PHOTOTRANSISTOR

No Preview Available !

61048-001 pdf
61048
SILICON PHOTOTRANSISTOR (GS4123)
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified.
PARAMETER
SYMBOL MIN
TYP MAX
Light Current
5 20
IL 20
30
30
50
50 --
Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Light Current Rise Time
ID
BVCEO
BVECO
30
7
50
8
10
tr 15
20
Saturation Voltage
VCE (sat)
0.2
Angular Response
θ 10
NOTES:
1. Irradiance in mW/cm2 from tungsten source at a color temperature of 2870K.
2. The angle between incidence for peak response and incidence for 50% of peak response.
UNITS
mA
nA
V
V
µs
V
degrees
TEST CONDITIONS
VCE = 5.0V, H = 20 mW/cm2
VCE = 5V, H = 0
IC = 100µA
IE = 100µA
RL = 100, VCC = 5V, IL = 1.0mA
IC = 0.4mA, H = 20 mW/cm2
NOTE
1
2
PULSE RESPONSE TEST
Vcc CIRCUIT AND WAVEFORM
90%
H
BASE
OPEN
DUT
IL RL
OUTPUT
10%
tr
tf
RELATIVE SPECTRAL RESPONSE
100
90
80
70
60
50
40
30
20
10
0
0.2 0.3 0.4
0.5 0.6 0.7
0.8 0.9
1.0 1.1 1.2
WAVELENGTH [um]
ANGULAR RESPONSE
100
80
60
40
20
0
-50 -40 -30
-20 -10 0 10 20
ANGLE [DEGREES]
30 40 50
DARK CURRENT versus TEMPERATURE
10
1.0 VCC =30 V
M=0
0.1
0.01
0.001
COLLECTOR EMITTER CHARACTERISTICS
10
SOURCE TEMP - 2870
TUNGSTEN SOURCE
TA = 25°C
8.0
H = 10 mW
6.0
4.0 H = 50
0.0001
0.00001
-50
-25 0 25 50 75 100
TA - AMBIENT TEMPERATURE - °C
125
2.0
0
0
H = 20
H = 10
5 10 15 20 25 30 35
VCE COLLECTOR-EMITTER VOLTAGE [VOLTS]
PARAMETER
Bias Voltage-Collector/Emitter
Irradiance (H)
RECOMMENDED OPERATING CONDITIONS:
SYMBOL
MIN
IF 5
H 15
MAX
10
25
PART NUMBER
61048-001
61048-101
61048-002
61048-102
61048-003
61048-103
61048-004
61048-104
SELECTION GUIDE
PART DESCRIPTION
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening
UNITS
mA
mW/cm2
IL Range
5 to 20mA
5 to 20mA
20 to 30mA
20 to 30mA
30 to 50mA
30 to 50mA
+50mA
+50mA
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
6-5


Part Number 61048-001
Description SILICON PHOTOTRANSISTOR
Maker Micropac Industries
Total Page 2 Pages
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