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  Microchip Technology Semiconductor Electronic Components Datasheet  

MCP6G02 Datasheet

(MCP6G01 - MCP6G04) Selectable Gain Amplifier

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MCP6G01/2/3/4
110 µA Selectable Gain Amplifier
Features
• 3 Gain Selections:
- +1, +10, +50 V/V
• One Gain Select Input per Amplifier
• Rail-to-Rail Input and Output
• Low Gain Error: ±1% (max.)
• High Bandwidth: 250 kHz to 900 kHz (typ.)
• Low Supply Current: 110 µA (typ.)
• Single Supply: 1.8V to 5.5V
• Extended Temperature Range: -40°C to +125°C
Typical Applications
• A/D Converter Driver
• Industrial Instrumentation
• Bar Code Readers
• Metering
• Digital Cameras
Block Diagram
VDD
VIN
Gain
Switches
RF
3
VOUT
GSEL
CS
Gain Select
Logic
5 MΩ
(MCP6G03
only)
VSS
RG
Gain
(V/V)
GSEL Voltage (Typ.)
(V)
1
10
50
Note:
VDD/2 (or open)
0
VDD
VSS is assumed to be 0V
Description
The Microchip Technology Inc. MCP6G01/2/3/4 are
analog Selectable Gain Amplifiers (SGA). They can be
configured for gains of +1 V/V, +10 V/V, and +50 V/V
through the Gain Select input pin(s). The Chip Select
pin on the MCP6G03 can put it into shutdown to
conserve power. These SGAs are optimized for single
supply applications requiring reasonable quiescent
current and speed.
The single amplifier MCP6G01 and MCP6G03, and the
dual amplifier MCP6G02, are available in 8-pin SOIC
and MSOP packages. The quad amplifier MCP6G04 is
available in 14-pin SOIC and TSSOP packages. All
parts are fully specified from -40°C to +125°C.
Package Types
MCP6G01
SOIC, MSOP
MCP6G02
SOIC, MSOP
NC 1
GSEL 2
VIN 3
VSS 4
8 NC VOUTA 1
7 VDD GSELA 2
6 VOUT
5 NC
VINA 3
VSS 4
8 VDD
7 VOUTB
6 GSELB
5 VINB
MCP6G03
SOIC, MSOP
MCP6G04
SOIC, TSSOP
NC 1
GSEL 2
VIN 3
VSS 4
8 CS VOUTA 1
7 VDD GSELA 2
6 VOUT
5 NC
VINA 3
VDD 4
VINB 5
GSELB 6
14 VOUTD
13 GSELD
12 VIND
11 VSS
10 VINC
9 GSELC
VOUTB 7
8 VOUTC
© 2006 Microchip Technology Inc.
DataSheet4 U .com
DS22004A-page 1


  Microchip Technology Semiconductor Electronic Components Datasheet  

MCP6G02 Datasheet

(MCP6G01 - MCP6G04) Selectable Gain Amplifier

No Preview Available !

MCP6G02 pdf
www.DataSheet4U.com
MCP6G01/2/3/4
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD – VSS ........................................................................7.0V
Current at Analog Input Pin (VIN) ......................................±2 mA
Analog Input (VIN) †† ..................... VSS – 1.0V to VDD + 1.0V
All other Inputs and Outputs........... VSS – 0.3V to VDD + 0.3V
Output Short Circuit Current...................................continuous
Current at Output and Supply Pins ................................ ±30 mA
Storage Temperature.....................................-65°C to +150°C
Junction Temperature.................................................. +150°C
ESD protection on all pins (HBM; MM) ................ ≥ 4 kV; 200V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† See Section 4.1.4 “Input Voltage and Current Limits”.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, G = +1 V/V,
VIN = (0.3V)/G, RL = 100 kΩ to VDD/2, GSEL = VDD/2, and CS is tied low.
Parameters
Sym
Min Typ Max Units
Conditions
Amplifier Inputs (VIN)
Input Offset Voltage
VOS
–4.5 ±1.0 +4.5
mV G = +1
— ±1.0 —
mV G = +10, +50
Input Offset Voltage Drift
Power Supply Rejection Ratio
ΔVOS/ΔTA
±2
— µV/°C G = +1, TA = -40°C to +125°C
PSRR 65 80 —
dB G = +1 (Note 1)
Input Bias Current
Input Bias Current at
Temperature
Input Impedance
Amplifier Gain
IB — 1 — pA
IB
— 30 —
pA TA = +85°C
IB
— 1000 5000
pA TA = +125°C
ZIN
— 1013||6 —
Ω||pF
Nominal Gains
G
— 1 to 50 —
V/V +1, +10 or +50
DC Gain Error G = +1
G +10
DC Gain Drift G = +1
G +10
Ladder Resistance (Note 1)
gE
–0.3 — +0.3
% VOUT 0.3V to VDD 0.3V
gE
–1.0 — +1.0
% VOUT 0.3V to VDD 0.3V
ΔG/ΔTA
±1
— ppm/°C TA = -40°C to +125°C
ΔG/ΔTA
±4
— ppm/°C TA = -40°C to +1285°C
Ladder Resistance
Ladder Resistance
across Temperature
RLAD
200 350 500
kΩ
ΔRLAD/ΔTA
–1800
ppm/°C TA = -40°C to +125°C
Amplifier Output
DC Output Non-linearity G = +1
VONL –0.2 — +0.2 % of FSR VOUT = 0.3V to VDD – 0.3V,
VDD = 1.8V
VONL –0.1 — +0.1 % of FSR VOUT = 0.3V to VDD – 0.3V,
VDD = 5.5V
DC Output Non-linearity, G = +10, +50
VONL –0.05 — +0.05 % of FSR VOUT = 0.3V to VDD – 0.3V
Maximum Output Voltage Swing
VOH, VOL VSS+10 — VDD–10 mV G = +1; 0.3V output overdrive
VOH, VOL VSS+10 — VDD–10 mV G +10; 0.5V output overdrive
Short Circuit Current
ISC
— ±7 —
mA VDD = 1.8V
ISC
— ±20 —
mA VDD = 5.5V
Note 1:
RLAD (RF+RG in Figure 4-1) connects VSS, VOUT, and the inverting input of the internal amplifier. Thus, VSS is coupled
to the internal amplifier and the PSRR spec describes PSRR+ only. It is recommended that the VSS pin be tied directly
to ground to avoid noise problems.
2: IQ includes current in RLAD (typically 0.6 µA at VOUT = 0.3V), and excludes digital switching currents.
DS22004A-page 2
DataSheet4 U .com
© 2006 Microchip Technology Inc.


Part Number MCP6G02
Description (MCP6G01 - MCP6G04) Selectable Gain Amplifier
Maker Microchip Technology
Total Page 30 Pages
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