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MAX11015 - Automatic RF MESFET Amplifier Drain-Current Controllers

This page provides the datasheet information for the MAX11015, a member of the MAX11014 Automatic RF MESFET Amplifier Drain-Current Controllers family.

Description

The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations.

Features

  • Dual Drain-Current-Sense Gain Amplifier Preset Gain of 4 ±0.5% Accuracy for Sense Voltages Between 75mV and 625mV (MAX11014).
  • Common-Mode Sense-Resistor Voltage Range 0.5V to 11V (MAX11014) 5V to 32V (MAX11015).
  • Low-Noise Output GATE Bias with ±10mA GATE Drive.
  • Fast Clamp and Power-On Reset.
  • 12-Bit DAC Controls MESFET GATE Voltage.
  • Internal Temperature Sensor/Dual Remote Diode Temperature Sensors.
  • Internal 12-Bit ADC Measures Temper.

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www.DataSheet4U.com XX-XXXX; Rev 0; 10/05 Automatic RF MESFET Amplifier Drain-Current Controllers General Description The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation while the MAX11015 targets Class AB operation. Both devices integrate SRAM lookup tables (LUTs) that can be used to store temperature and drain-current compensation data. Each device includes dual high-side current-sense amplifiers to monitor the MESFET drain currents through the voltage drop across the sense resistors in the range of 0mV to 625mV.
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