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60R360P Datasheet Preview

60R360P Datasheet

MMP60R360P

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60R360P pdf
MMP60R360P Datasheet
MMP60R360P
600V 0.36N-channel MOSFET
Description
MMP60R360P is power MOSFET using magnachips advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Key Parameters
Parameter
VDS @ Tj,max
RDS(on),max
VTH,typ
ID
Qg,typ
Value
650
0.36
3
11
28
Unit
V
V
A
nC
Package & Internal Circuit
D
G
DS
G
S
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Motor Control
DC DC Converters
Ordering Information
Order Code
MMP60R360PTH
Marking
60R360P
Temp. Range
-55 ~ 150
Package
TO-220
Packing
Tube
RoHS Status
Halogen Free
Jun. 2013 Revision 1.1
1 MagnaChip Semiconductor Ltd.



MagnaChip
MagnaChip

60R360P Datasheet Preview

60R360P Datasheet

MMP60R360P

No Preview Available !

60R360P pdf
MMP60R360P Datasheet
Absolute Maximum Rating (Tc=25unless otherwise specified)
Parameter
Drain Source voltage
Gate Source voltage
Continuous drain current
Pulsed drain current(1)
Power dissipation
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
dv/dt
Rating
600
±30
11
6.95
33
83
220
50
Unit
V
V
A
A
A
W
mJ
V/ns
Note
TC=25
TC=100
Diode dv/dt ruggedness
Storage temperature
Maximum operating junction
temperature
1) Pulse width tP limited by Tj,max
2) ISD ID, VDS peak V(BR)DSS
dv/dt
Tstg
Tj
15
-55 ~150
150
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Symbol
Rthjc
Rthja
Value
1.5
62.5
Unit
/W
/W
Jun. 2013 Revision 1.1
2 MagnaChip Semiconductor Ltd.


Part Number 60R360P
Description MMP60R360P
Maker MagnaChip
Total Page 10 Pages
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1 60R360P MMP60R360P MagnaChip
MagnaChip
60R360P pdf




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