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MX29LV161T Datasheet Preview

MX29LV161T Datasheet

16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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MX29LV161T pdf
MX29LV161T/B
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 2,097,152 x 8/1,048,576 x 16 switchable
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 70/90ns
• Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
• Status Reply
- Data polling & Toggle bit for detection of program and
erase operation completion.
• Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Tempoary sector unprotect allows code changes in
previously locked sectors.
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 2.3V
• Package type:
- 44-pin SOP
- 48-pin TSOP
- 48 Ball CSP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
GENERAL DESCRIPTION
The MX29LV161T/B is a 16-mega bit Flash memory or-
ganized as 2M bytes of 8 bits or 1M words of 16 bits.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory. The MX29LV161T/B is packaged in 44-pin
SOP, 48-pin TSOP, and 48CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV161T/B offers access time as fast
as 70ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV161T/B has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV161T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV161T/B uses a 2.7V~3.6V VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
P/N:PM0855
REV. 1.0, SEP. 24, 2001
1



Macronix
Macronix

MX29LV161T Datasheet Preview

MX29LV161T Datasheet

16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

No Preview Available !

MX29LV161T pdf
MX29LV161T/B
PIN CONFIGURATIONS
44 SOP(500 mil)
RESET
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 WE
43 A19
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 BYTE
32 GND
31 Q15/A-1
30 Q7
29 Q14
28 Q6
27 Q13
26 Q5
25 Q12
24 Q4
23 VCC
48 TSOP (Standard Type) (12mm x 20mm)
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
RESET
NC
NC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
PIN DESCRIPTION
SYMBOL
A0~A19
Q0~Q14
Q15/A-1
CE
WE
BYTE
RESET
OE
RY/BY
VCC
GND
PIN NAME
Address Input
Data Input/Output
Q15(Word mode)/LSB addr(Byte mode)
Chip Enable Input
Write Enable Input
Word/Byte Selction input
Hardware Reset Pin/Sector Protect Unlock
Output Enable Input
Ready/Busy Output
Power Supply Pin (2.7V~3.6V)
Ground Pin
MX29LV161T/B
48 A16
47 BYTE
46 GND
45 Q15/A-1
44 Q7
43 Q14
42 Q6
41 Q13
40 Q5
39 Q12
38 Q4
37 VCC
36 Q11
35 Q3
34 Q10
33 Q2
32 Q9
31 Q1
30 Q8
29 Q0
28 OE
27 GND
26 CE
25 A0
48-Ball CSP 8mm x 13mm (Ball Pitch=0.8mm) Top View, Balls Facing Down
A B CDE F GH
6 A13 A12 A14 A15 A16 BYTE Q15/A-1 GND
5 A9 A8 A10 A11 Q7 Q14 Q13 Q6
4 WE
RESET NC
A19 Q5
Q12 VCC Q4
3 RY/BY NC A18 NC Q2 Q10 Q11 Q3
2 A7 A17 A6 A5 Q0 Q8 Q9 Q1
1 A3 A4 A2 A1 A0 CE OE GND
P/N:PM0855
REV. 1.0, SEP. 24, 2001
2


Part Number MX29LV161T
Description 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
Maker Macronix
Total Page 30 Pages
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