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MOS-TECH
MOS-TECH

MT3245A Datasheet Preview

MT3245A Datasheet

N-Channel Power MOSFET

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MT3245A pdf
MOS-TECH Semiconductor Co.,LTD
07$
N-Channel PowerTrench® MOSFET
4V, 1A, 3.0mΩ
Features
„ Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A
„ Typ Qg(10) = 142nC at VGS = 10V
„ Low Miller Charge
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ RoHS Compliant
Applications
„ Power Tools
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter / Alternator
„ Distributed Power Architecture and VRMs
„ Primary Switch for 12V Systems
GDS
TO-220

©2010 MOS-TECH Semiconductor Corporation
1
www.mtsemi.com



MOS-TECH
MOS-TECH

MT3245A Datasheet Preview

MT3245A Datasheet

N-Channel Power MOSFET

No Preview Available !

MT3245A pdf
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
IDM
EAS
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Continuous (TA = 25oC, RθJA = 43oC/W)
- Pulsed
Single Pulse Avalanche Energy
(Note 1)
Power Dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Ratings
45
±20
150*
109*
110
25
See Figure 4
531
188
1.25
-55 to +175
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Units
V
V
A
mJ
W
W/oC
oC
RθJC
Thermal Resistance Junction to Case
0.8 oC/W
RθJA
Thermal Resistance Junction to Ambient
(Note 2)
62
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-220, 1in2 copper pad area
43 oC/W
Package Marking and Ordering Information
Device Marking
MT3245A
Device
MT3245A
Package
TO-220
Reel Size
N/A
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
Tape Width
N/A
Quantity
50 units
Min Typ Max Units
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS = 32V,
VGS = 0V
TC = 150oC
VGS = ±20V
45
-
-
-
- -V
-
-
1
250
μA
- ±100 nA
VGS(th) Gate to Source Threshold Voltage
rDS(on) Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 80A, VGS= 10V
ID
TJ
=
=
8107A5o, CVGS=
10V,
2 2.8 4
V
- 2.3 3.0
- 4.2 5.5 mΩ
Ciss
Coss
Crss
RG
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 20V
ID = 35A
Ig = 1mA
- 9310
-
pF
- 800 - pF
- 510 - pF
- 0.9 - Ω
-
142 185
nC
- 17.5 23 nC
- 36 - nC
- 18.8
-
nC
- 32
- nC
2
www.mtsemi.com


Part Number MT3245A
Description N-Channel Power MOSFET
Maker MOS-TECH
Total Page 9 Pages
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